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Part: BAT54C

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Schottky Barrier Rectifiers

Description: Schottky Diodes

Company: General Semiconductor

Datasheet: Download BAT54C datasheet     File size : 40 kB

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Datasheet text preview:
BAT54 thru BAT54S
Vishay Semiconductor

Schottky Diodes

TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)

Features
· These diodes feature very low turn-on voltage and fast switching. · These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

Top View

Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box

1

2 max. .004 (0.1)

.007 (0.175) .005 (0.125)

.037(0.95) .037(0.95)

.016 (0.4)

.016 (0.4)

.102 (2.6) .094 (2.4)

Dimensions in inches and (millimeters)

.045 (1.15) .037 (0.95)

Mounting Pad Layout
BAT54A
Marking: L42

BAT54
Marking: L4 Top View

0.031 (0.8)

0.035 (0.9)
BAT54C
Marking: L43 Top View

BAT54S
Marking: L44

0.079 (2.0)

0.037 (0.95)

0.037 (0.95)

Maximum Ratings and Thermal Characteristics
Parameter Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25°C Repetitive Peak Forward Current at Tamb = 25°C Surge Forward Current at tp < 1 s, Tamb = 25°C Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range
Note: (1) Device on fiberglass substrate, see layout on next page.

(TA = 25°C unless otherwise noted)

Symbol VRRM IF IFRM IFSM Ptot RJA Tj TS

Value 30 200 300 600
(1) (1) (1)

Unit V mA mA mA mW °C/W °C °C

230 430
(1)

125 ­ 65 to +150

Document Number 88142 03-Jan-02

www.vishay.com 1

BAT54 thru BAT54S
Vishay Semiconductor Electrical Characteristics (T
Parameter Reverse Breakdown Voltage Leakage Current
J

= 25°C unless otherwise noted)

Symbol V(BR)R IR

Test Condition 100µA pulses Pulse Test tp < 300µs < 2% at VR = 25V Pulse Test tp < 300µs, < 2% IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VF = 1V f = 1MHz IF = 10mA, IR = 10mA Irr = 1mA, RL = 100

Min 30 --

Typ -- --

Max -- 2

Unit V µA

Forward Voltage

VF

-- -- -- -- -- -- --

-- -- -- -- -- -- --

240 320 400 500 1000 10 5

mV mV mV mV mV pF ns

Capacitance Reverse Recovery Time
Note: (1) Device on fiberglass substrate, see layout.

Ctot trr

Layout for RJA test
Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm)
0.30 (7.5) 0.12 (3)

.04 (1)

.08 (2) .04 (1) .08 (2)

0.59 (15) 0.47 (12)

0.03 (0.8)

0.2 (5)

0.06 (1.5) 0.20 (5.1)

Dimensions in inches (millimeters)

www.vishay.com 2

Document Number 88142 03-Jan-02

BAT54 thru BAT54S
Vishay Semiconductor Ratings and Characteristic Curves
Typical Forward Voltage Forward Current at Various Temperatures
1000 1000

Typical Variation of Reverse Current at Various Temperatures

100
TJ = 125°C

100

TJ = 125°C

IF in mA

10

TJ = -40°C

IR in µA

TJ = 100°C

10
TJ = 75°C

1

TJ = 25°C

1

TJ = 50°C

0.1

0.1

TJ = 25°C

0.01 0 0.2 0.4 0.6 0.8 VF in V 1.0 1.2 1.4

0.01 0 5 10 15 20 VR in V 25 30

Typical Capacitance °C vs. Reverse Applied Voltage VR
14 12 10 8 6 4

Cin pF

2

0 0 4 8 12 16 VR in V 20 24 28

Document Number 88142 03-Jan-02

www.vishay.com 3




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