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Part: BAV19WSthruBAV21WS
Category:
Discrete
-> Diodes & Rectifiers
-> Switching Diodes
Description:
Company: General Semiconductor
Datasheet: Download BAV19WSthruBAV21WS datasheet File size : 48 kB
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Datasheet text preview:
BAV19WS thru BAV21WS
New Product
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diodes
SOD-323
.012 (0.3)
Cathode Band
.112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65)
Mounting Pad Layout
0.055 (1.40) 0.062 (1.60) 0.047 (1.20)
en ToDimView in inches pand sions (millimeters)
.059 (1.5) .004 (0.1) max. .043 (1.1)
.049 (1.25) max.
.010 (0.25) min.
.006 (0.15) max.
Mechanical Data
Case: SOD-323 Plastic Case Weight: approx. 0.004g Marking BAV19WS = A8 Code: BAV20WS = A9 BAV21WS = AA Packaging Codes/Options: D5/10K per 13" reel (8mm tape), 30K/box D6/3K per 7" reel (8mm tape), 30K/box
Features
· Silicon Epitaxial Planar Diodes · For general purpose · These diodes are also available in other case styles including: the DO-35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT-23 case with the type designation BAS19 - BAS21 and the SOD-123 case with the type designation BAV19W - BAV21W
(TA = 25°C unless otherwise noted)
Maximum Ratings and Thermal Characteristics
Parameter Continuous Reverse Voltage BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS Symbol VR
Value 100 150 200 120 200 250 250(1) 200(1) 625(1) 1 200(1) 650(1) 150
(1) (1)
Unit V
Repetitive Peak Reverse Voltage
VRRM IF IF(AV) IFRM IFSM Ptot RJA Tj TS
V mA mA mA A mW °C/W °C °C
Forward DC Current at Tamb = 25°C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25°C and f 50Hz Repetitive Peak Forward Current at f 50Hz, = 180°, Tamb = 25°C Surge Forward Current at t < 1s, Tj = 25°C Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range
Note: (1) Valid provided that leads are kept at ambient temperature.
65 to +175
Document Number 88151 14-May-02
www.vishay.com 1
BAV19WS thru BAV21WS
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter Forward Voltage BAV19WS BAV19WS BAV20WS BAV20WS BAV21WS BAV21WS
J
= 25°C unless otherwise noted)
Symbol VF
Test Condition IF = 100 mA IF = 200 mA VR = 100V VR = 100V, Tj = 100 °C VR = 150V VR = 150V, Tj = 100 °C VR = 200V VR = 200V, Tj = 100 °C IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA Irr = 3 mA, RL = 100
Min -- -- -- -- -- -- -- -- -- -- --
Typ -- -- -- -- -- -- -- -- 5 -- --
Max 1.00 1.25 100 15 100 15 100 15 -- 1.5 50
Unit V nA µA nA µA nA µA pF ns
Leakage Current
IR
Dynamic Forward Resistance Capacitance Reverse Recovery Time
rf Ctot trr
Ratings and Characteristic Curves (T
A
= 25°C unless otherwise noted)
www.vishay.com 2
Document Number 88151 14-May-02
BAV19WS thru BAV21WS
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (T
A
= 25°C unless otherwise noted)
Document Number 88151 14-May-02
www.vishay.com 3
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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