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Part: BAV19WthruBAV21W

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Switching Diodes

Description:

Company: General Semiconductor

Datasheet: Download BAV19WthruBAV21W datasheet     File size : 48 kB

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Datasheet text preview:
BAV19W thru BAV21W
Vishay Semiconductors
formerly General Semiconductor

Small-Signal Diodes
SOD-123
.022 (0.55)

Cathode Band
.152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55)

Top View
Mounting Pad Layout
0.094 (2.40)
.053 (1.35) max.
Dimensions in inches and (millimeters)

0.055 (1.40) 0.055 (1.40)

Features

.010 (0.25) min.

.006 (0.15) max.

.004 (0.1) max.

.067 (1.70) .055 (1.40)

Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.01g Marking BAV19W = A8 Code: BAV20W = A9 BAV21W = AA Packaging Codes/Options: D3/10K per 13" reel (8mm tape), 30K/box D4/3K per 7" reel (8mm tape), 30K/box

· Silicon Epitaxial Planar Diodes · For general purpose · These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designations BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to BAV21WS.

Maximum Ratings and Thermal Characteristics
Parameter Continuous Reverse Voltage BAV19W BAV20W BAV21W BAV19W BAV20W BAV21W Symbol VR

(TA = 25°C unless otherwise noted)

Value 100 150 200 120 200 250 250(1) 200(1)
(1)

Unit V

Repetitive Peak Reverse Voltage

VRRM IF IF(AV)

V mA mA

Forward DC Current at Tamb = 25°C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25°C and f 50Hz Repetitive Peak Forward Current at f 50Hz, = 180°, Tamb = 25°C Surge Forward Current at t < 1s, Tj = 25°C Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range
Note: (1) Valid provided that leads are kept at ambient temperature.

IFRM IFSM Ptot RJA Tj TS

625 1 410 375 150

mA A

(1) (1) (1) (1)

mW °C/W °C °C

­ 65 to +150

Document Number 88150 14-May-02

www.vishay.com 1

BAV19W thru BAV21W
Vishay Semiconductors
formerly General Semiconductor

Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)

Electrical Characteristics (T
Parameter Forward Voltage BAV19W BAV19W BAV20W BAV20W BAV21W BAV21W

J

= 25°C unless otherwise noted)

Symbol VF

Test Condition IF = 100mA IF = 200mA VR = 100V VR = 100V, Tj = 100°C VR = 150V VR = 150V, Tj = 100°C VR = 200V VR = 200V, Tj = 100°C IF = 10mA VR = 0, f = 1MHz IF = 30mA, IR = 30mA Irr = 3mA, RL = 100

Min -- -- -- -- -- -- -- -- -- -- --

Typ -- -- -- -- -- -- -- -- 5 1.5 --

Max 1.00 1.25 100 15 100 15 100 15 -- -- 50

Unit V nA µA nA µA nA µA pF ns

Leakage Current

IR

Dynamic Forward Resistance Capacitance Reverse Recovery Time

rf Ctot trr

Ratings and Characteristic Curves (T

A

= 25°C unless otherwise noted)

www.vishay.com 2

Document Number 88150 14-May-02

BAV19W thru BAV21W
Vishay Semiconductors
formerly General Semiconductor

Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)



Document Number 88150 14-May-02

www.vishay.com 3




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