Details, datasheet, quote on part number: BAW75andBAW76
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
CompanyGeneral Semiconductor
DatasheetDownload BAW75andBAW76 datasheet


Features, Applications

Silicon Epitaxial Planar Diodes Fast switching diodes.

Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13" reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box

Parameter Reverse Voltage Peak Reverse Voltage BAW75 BAW76 Symbol VR VRM

Rectified Current (Average) Half Wave Rectification with Resistive Load = 25C and 50 Hz Surge Forward Current = 25C Power Dissipation = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range

Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.


Some Part number from the same manufacture General Semiconductor
BAW76 Small Signal Diodes
BB369S Tuner Diodes
BB721 Tuner Diode
BB741S Tuner Diodes
BC327 Small Signal Transistors (PNP)
BC327-16 Small Signal Transistor (PNP)
BC328 Small Signal Transistors (PNP)
BC328-16 Small Signal Transistor (PNP)
BC337 Small Signal Transistors (NPN)
BC337-16 Small Signal Transistor (NPN)
Same catergory

DB101 : 1 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000v. 1 Amp Single Phase Glass Passivated Bridge Rectifier to 1000 Volts Through Hole Package Glass Passivated Diode Construction Moisture Resistant Epoxy Case High Surge Current Capability Operating Temperature: to +150C Storage Temperature: to +150C Maximum Recurrent Peak Reverse Voltage 800V 1000V Maximum DC Blocking Voltage 800V 1000V Average Forward.


MJ16012 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 450V ;; IC(cont) = 15A ;; HFE(min) = 7 ;; HFE(max) = - ;; @ Vce/ic = 5V / 15A ;; FT = - ;; PD = 175W.

PH1214-25S : 1200-1400 MHz,25 W, 1 MS Pulse,radar Pulsed Power Transistor. Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty - 1.4 GHz - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package I s .

TE200 : Glass Passivated Junction Plastic Rectifier. GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE to 1000 Volts CURRENT - 2.0 Amperes l Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound l 2.0 ampere operation at TA=55 with no thermal runaway Exceeds environmental standards of MIL-S-19500/228 Glass passivated junction in DO-15.

MCP1405 : Low-side MOSFET Drivers .5A-1.2A Peak Out. Current The MCP1401/02 MOSFET drivers are inverting and non-inverting respectively.These MOSFET drivers are small size and allow the gate driver to be positioned close to the MOSFET's physical gate connection, which minimizes gate bounce caused by the parasitic PCB layout. This also minimizes gate rise-and-fall.

BSY52LEADFREE : 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39. s: Polarity: NPN ; Package Type: TO-3, TO-39, TO-39, 3 PIN.

DWN347-12/22 : 400 A, 2200 V, SILICON, RECTIFIER DIODE. s: Package: DIE-2 ; Number of Diodes: 1 ; VRRM: 2200 volts ; IF: 400000 mA ; RoHS Compliant: RoHS.

FCB21K0J : RESISTOR, WIRE WOUND, 2 W, 5 %, 20 ppm, 1000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 1000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 20 ±ppm/°C ; Power Rating: 2 watts (0.0027.

MJ14000.MOD : 70 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AE. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

MJD148-2 : 4 A, 45 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: CASE 369A-13, DPAK-3.

RJH60F4DPK-00-T0 : 60 A, 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: TO-3, SC-65, TO-3P, 3 PIN ; Number of units in IC: 1.

SMI-201209E-1R0K : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 1 microH ; Rated DC Current: 50 milliamps ; Operating Temperature: -40 to 85 C (-40 to 185 F).

2N5745.MOD : 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: PNP ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

501R15W100KV4R : CAPACITOR, CERAMIC, MULTILAYER, 500 V, X7R, 0.00001 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 500 volts ; Mounting.

52387R : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

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