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Part: BC856thruBC859
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description:
Company: General Semiconductor
Datasheet: Download BC856thruBC859 datasheet File size : 49 kB
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Datasheet text preview:
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
Mounting Pad Layout
0.031 (0.8)
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)
0.035 (0.9) 0.079 (2.0)
Top View
Pin Configuration 1 = Base, 2 = Emitter, 3 = Collector
0.037 (0.95)
0.037 (0.95)
Type
Dimensions in inches and (millimeters)
Marking 3A 3B 3E 3F 3G
Type BC858A B C BC859A B C
Marking 3J 3K 3L 4A 4B 4C
1
2 max. .004 (0.1)
BC856A B BC857A B C
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15) .037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Features
· PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. · Especially suited for automatic insertion in thick and thin-film circuits. · These transistors are subdivided into three groups (A, B, and C) according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC558 and BC859 can be supplied in all three groups. The BC849 is a low noise type. · As complementary types, the NPN transistors BC846...BC849 are recomended.
(TA = 25°C unless otherwise noted)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Base Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859
Symbol
VCBO
Value
80 50 30 80 50 30 65 45 30 5 100 200 200 200 310 (1) 450 (1) 320
(1)
Unit
V
Collector-Emitter Voltage (Base shorted)
VCES
V
Collector-Emitter Voltage (Base open) Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50°C Thermal Resistance Junction to Ambient Air
VCEO VEBO IC ICM IBM IEM Ptot RJA RSB Tj TS
V V mA mA mA mA mW °C/W °C/W °C °C
Thermal Resistance Junction to Substrate Backside Junction Temperature Storage Temperature Range
Note: (1) Device on fiberglass substrate, see layout on third page.
150 65 to +150
Document Number 88169 09-May-02
www.vishay.com 1
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter Current Gain Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Collector Saturation Voltage Base Saturation Voltage Base-Emitter VoltageVBEon Collector-Base Cutoff Current Gain-Bandwidth Product Collector-Base Capacitance Noise Figure BC856, BC857, BC858 BC859
J
= 25°C unless otherwise noted)
Symbol hfe
Test Condition VCE = 5V, IC = 2mA f = 1kHz VCE = 5V, IC = 2mA f = 1kHz VCE = 5V, IC = 2mA f = 1kHz VCE = 5V, IC = 2mA f = 1kHz VCE = 5V, IC = 10µA
Min -- -- -- 1.6 3.2 6.0 -- -- -- -- -- -- -- -- -- 110 200 420 -- -- -- -- 660 -- -- -- -- -- -- -- --
Typ 220 330 600 2.7 4.5 8.7 18 30 60 1.5 104 2 104 3 104 90 150 270 180 290 520 90 250 700 900 750 -- -- -- 150 -- 2 1 1.2
Max -- -- -- 4.5 8.5 15.0 30 60 110 -- -- -- -- -- -- 220 450 800 300 650 -- -- mV 820 15 5 -- 6 10 4
Unit -- -- -- k
Input Impedance
hie
Output Admittance
hoe
µS -- -- -- -- -- -- -- -- -- mV mV
Reverse Voltage Transfer Ratio DC Current Gain
hre hFE
hFE
VCE = 5 V, IC = 2mA
VCEsat VBEsat
IC = 10 mA, IB = 0.5mA IC = 100 mA, IB = 5mA IC = 10 mA, IB = 0.5mA IC = 100 mA, IB = 5mA
VCE = 5 V, IC = 2mA 600 VCE = 5 V, IC = 10mA ICBO fT CCBO VCB = 30V VCB = 30V, TJ = 150°C VCE = 5V, IC = 10mA f = 100MHz VCB = 10V, f = 1MHz VCE = 5V, IC = 200µA RG = 2k, f = 1kHz, f = 200 Hz F BC859 VCE = 5V, IC = 200µA RG = 2k, f = 30...15000Hz
nA µA MHz pF
dB
4
Note: (1) Device on fiberglass substrate, see layout on next page
www.vishay.com 2
Document Number 88169 09-May-02
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
0.30 (7.5) 0.12 (3)
Layout for RJA test
Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm)
0.59 (15) 0.47 (12) 0.03 (0.8) .04 (1) .08 (2) .04 (1) .08 (2)
Dimensions in inches (millimeters)
0.2 (5)
Admissible power dissipation versus temperature of substrate backside
Device on fiblerglass substrate, see layout
0.06 (1.5) 0.20 (5.1)
Pulse thermal resistance versus pulse duration (normalized)
Device on fiblerglass substrate, s e e layout
DC current gain versus collector current
CollectorBase cutoff current versus ambient temperature
Document Number 88169 09-May-02
www.vishay.com 3
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com 4
Document Number 88169 09-May-02
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88169 09-May-02
www.vishay.com 5
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