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Part: BCW68G
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
-> Epitaxial
Description: Small Signal Transistor (PNP)
Company: General Semiconductor
Datasheet: Download BCW68G datasheet File size : 68 kB
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Datasheet text preview:
BCW68G
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)
Top View
Mounting Pad Layout
Pin Configuration
1. Base 2. Emitter 3. Collector
0.031 (0.8)
1
2 max. .004 (0.1)
0.035 (0.9) 0.079 (2.0)
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15) .037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Features
Dimensions in inches and (millimeters)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: DG Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
· PNP Silicon Epitaxial Planar Transistors · Suited for low level, low noise, low frequency applications in hybrid cicuits. · Low Current, Low Voltage. · As complementary type, BCW66G NPN transistor is recommended.
Maximum Ratings & Thermal Characteristics
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Base Current (DC) Peak Base Current Power Dissipation, TS = 79°C Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Soldering Point
Note: (1) Mounted on FR-4 printed-ciruit board.
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj TSTG RJA RJS
Value 45 60 5.0 800 1.0 100 200 330 150 65 to +150 285(1) 215
Unit V V V mA A mA mA mW °C °C °C/W °C/W
Document Number 88173 09-May-02
www.vishay.com 1
BCW68G
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
DC Current Gain(1) at VCE = 10V, IC = 100µA at VCE = 1V, IC = 10mA at VCE = 1V, IC = 100mA at VCE = 2V, IC = 500mA Collector-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 Collector-Base Breakdown Voltage at IC = 10µA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10µA, at IC = 0 Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150°C Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 5V, IC = 50mA, f = 20MHZ Collector-Base Capacitance at VCB = 10V, f = 1MHz Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz
Note: (1) Pulse test: t 300µs, D = 2%
(TA = 25°C unless otherwise noted)
Symbol hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat V(BR)CEO V(BR)CBO V(BR)EBO
Min. 50 120 160 60 45 60 5
TYP. 250
Max. 400 0.3 0.7 1.25 2
Unit V V V V V V V
ICBO ICBO IEBO fT CCB CEB
200 6 60
20 20 20
nA µA nA MHz pF pF
www.vishay.com 2
Document Number 88173 09-May-02
BCW68G
Vishay Semiconductors
formerly General Semiconductor
Fig. 1 - Switching Waveforms
10% INPUT 90%
t on
t off
10% OUTPUT 90% 10%
td t r ts tf
90%
Document Number 88173 09-May-02
www.vishay.com 3
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