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Part: EGP20AthruEGP20G
Category:
Discrete
-> Diodes & Rectifiers
Description:
Company: General Semiconductor
Datasheet: Download EGP20AthruEGP20G datasheet File size : 64 kB
Request For quote: Find where to buy EGP20AthruEGP20G
Datasheet text preview:
EGP20A thru EGP20G
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Ultrafast Rectifier
DO-204AC (DO-15)
0.034 (0.86) 0.028 (0.71) Dia.
Reverse Voltage 50 to 400 V Forward Current 2.0 A
Features
· Plastic package has Underwriters Laboratories Flammability Classification 94V-0 · Cavity-free glass passivated junction · Ultrafast recovery time for high efficiency · Low forward voltage, high current capability · Low leakage current · High surge current capability · High temperature metallurgically bonded construction · High temperature soldering guaranteed: 300°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
1.0 (25.4) min.
ted* aten P
0.300 (7.6) 0.230 (5.8)
®
0.140 (3.6) 0.104 (2.6) Dia.
Mechanical Data
Case: JEDEC DO-204AC, molded plastic over solid glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 oz., 0.4 g
1.0 (25.4) min.
Dimensions in inches and (millimeters)
*Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 55°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load Typical thermal resistance (Note 1) Operating and storage temperature range Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G VRRM VRMS VDC IF(AV) IFSM RJA RJL TJ,TSTG 50 35 50 100 70 100 150 105 150 2.0 75 40 15 65 to +150 200 140 200 300 210 300 400 280 400 Unit V V V A A °C/W °C
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G VF IR trr CJ 70 0.95 5.0 100 50 45 1.25
Unit V µA ns pF
Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Typical junction capacitance at 4.0V, 1MHz TA = 25°C TA = 125°C
Note: (1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted
Document Number 88583 19-Mar-02
www.vishay.com 1
EGP20A thru EGP20G
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 Maximum Forward Current Derating Curve
Average Forward Rectified Current (A)
3.0 90
Fig. 2 Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
75 60 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method)
Resistive or Inductive Load 0.375" (9.5mm) Lead Length
2.0
45
1.0
30 15 0
0 0 25 50 75 100 125 150 175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 Typical Instantaneous Forward Characteristics
50 100
Fig. 4 Typical Reverse Characteristics
Instantaneous Reverse Current (µA)
TJ = 150°C
Instantaneous Forward Current (A)
10
10
TJ = 150°C
1
TJ = 25°C
1
TJ = 125°C
TJ = 75°C 0.1
0.1
Pulse Width = 300µs 1% Duty Cycle
0.01
TJ = 25°C
0.01 0.2
EGP20A -- EGP20D EGP20F & EGP20G 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 Typical Junction Capacitance
140 120
Fig. 6 Typical Transient Thermal Impedance
100
100 80 60 40 20 0 0.1
Transient Thermal Impedance (°C/W)
TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p
Junction Capacitance (pF)
10
1
EGP20A -- EGP20D EGP20F & EGP20G 1 10 100 1000
0.1 0.01
0.1
1
10
100
Reverse Voltage (V) www.vishay.com 2
t, Pulse Duration (sec.) Document Number 88583 19-Mar-02
Others parts begin by eg
EG-1 EG-2
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