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Part: G3SBA20
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description: Glass Passivated Single-phase Bridge Rectifier
Company: General Semiconductor
Datasheet: Download G3SBA20 datasheet File size : 283 kB
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Datasheet text preview:
G3SBA20 and G3SBA80
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
Case Type GBU
0.020 R (TYP.) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45o CHAMFER 0.310 (7.9) 0.290 (7.4) 0.160 (4.1) 0.140 (3.5) 0.740 (18.8) 0.720 (18.3) 0.085 (2.16) 0.065 (1.65) 0.075 (1.9)R. 0.080 (2.03) 0.060 (1.52) 5o TYP. 0.085 (2.16) 0.075 (1.90) 0.140 (3.56) 0.130 (3.30) 9o TYP.
Reverse Voltage 200 and 800 V Forward Current 4.0 A
Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · High case dielectric strength of 1500 VRMS · Ideal for printed circuit boards · Glass passivated chip junction · High surge current capability
Mechanical Data
0.710 (18.0) 0.690 (17.5)
0.100 (2.54) 0.085 (2.16)
0.050 (1.27) 0.040 (1.02)
0.080 (2.03) 0.065 (1.65)
0.190 (4.83) 0.210 (5.33)
0.022 (0.56) 0.018 (0.46)
Polarity shown on front side of case, positive lead by beveled corner
Lead forming option with 10mm-7.5mm spacing is available. Dimensions in inches and (millimeters)
Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 260°C/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3kg) tension Mounting Position: Any(3) Mounting Torque: 5 in-lbs max. Weight: 0.15 oz., 4.0 g Packaging codes/options: 1/400 ea. per Bulk Tray Stack
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100OC(1) TA = 25OC (2) Symbol VRRM VRMS VDC IF(AV) IFSM I2t RJA RJC TJ, TSTG
G3SBA20 200 140 200
G3SBA60 600 420 600 4.0 2.3 80 27 26 (1) 5.0 (2) 55 to +150
G3SBA80 800 560 800
Unit V V V A A A2sec °C/W °C
Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) Rating for fusing (t < 8.3ms) Typical thermal resistance per leg Operating junction storage and temperature range
Electrical Characteristics
Parameter Maximum instantaneous forward voltage drop per leg at 2.0 A Maximum DC reverse current at rated DC blocking voltage per leg
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol VF TA = 25°C TA = 125°C IR
G3SBA20
G3SBA60 1.00 5.0 400
G3SBA80
Unit V µA
Notes: (1) Unit case mounted on Al plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375" (9.5mm) lead length (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
Document Number 88606 21-Feb-03
www.vishay.com 1
G3SBA20 and G3SBA80
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Derating Cuve Output Rectified Current
4
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Leg
100
Average Forward Output Current (A)
Peak Forward Surge Current (A)
Heatsink Mounting, TC
3
80
60
2
P.C.B. Mounting, TA
1
40
20
1.0 Cycle
0 1 100
0 0 25 50 75 100 125 150
Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Forward Characteristics Per Leg
100 100
Fig. 4 - Typical Reverse Characteristics Per Leg
Instantaneous Reverse Current ( A)
Instantaneous Forward Current (A)
TA = 125°C
10
10
1
1
0.1
0.1
TA = 25°C
0.01 0 20 40 60 80 100
0.01 0.4 0.8 1.2 1.6 2 2.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance Per Leg
Transient Thermal Impedance (°C/W)
100 100
Fig. 6 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
10
10
1
1 0.1 1 10 100
0.1 0.01 0.1 1 10 100
Reverse Voltage (V)
www.vishay.com 2
t, Heating Time (sec.)
Document Number 88606 21-Feb-03
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