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Details, datasheet, quote on part number:GMS05C
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Datasheet text preview:
GMS05C
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TVS Diode Array
SOT-23-6L
0.120 (3.05) 0.110 (2.80)
Pin Configuration SOT-23-6L (Top View)
6 5 4
Top View
0.118 (3.00) 0.102 (2.60) 0.070 (1.75) 0.059 (1.50)
1
2
3
Mounting Pad Layout
0.020 (0.50) 0.014 (0.35) 0.040 (1.05) 0.033 (0.85) 0.083 (2.1) 0.067 (1.7) 0.006 (0.150) 0.0004 (0.010)
0.094 (2.4)
Dimensions in inches and (millimeters)
0.074 (1.9) Ref. 0.037 (0.95) Ref. 0.028 (0.7) 0.039 (1.07)
0.051 (1.30) 0.036 (0.90)
10° Typical
0.008 (0.20) 0.0035 (0.090)
Features Mechanical Characteristics
Case: SOT-23-6L package Molding Compound Flammability Rating: UL 94V-0 Marking Code: C05 Packaging Codes Options: E8 10K per 13" reel, 30K/box E9 3K per 7" reel, 30K/box · Transient protection for data lines as per IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 1000-4-4 (EFT) 40A (tp = 5/50ns) IEC 1000-4-5 (Lightning) 24A (tp = 8/20µs) · Small package for use in portable electronics · Protects 5 I/O lines · Low leakage current · Low operating and clamping voltages · High temperature guaranteed: 250°C/10 sec. at terminals
A
Maximum Ratings and Thermal Characteristics (T
Parameter Peak Pulse Power 8/20µs waveform Peak Pulse Current 8/20µs waveform Operating Temperature Storage Temperature Symbol PPPM IPP TJ TSTG
A
= 25°C unless otherwise noted)
Value 350
Unit W A °C °C
24
55 to +125 55 to +150
Electrical Characteristics (T
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage at It = 1mA Reverse Leakage Current at VRWM = 5V
= 25°C unless otherwise noted)
Symbol VRWM VBR IR VC VF Cj
Minimum 6
Typical 1.5 325
Maximum 5 20 9.8 14.5 400
Unit V V µA V V pF
Clamping Voltage at IPP = 5A, 8/20µs waveform at IPP = 24A, 8/20µs waveform Peak Forward Voltage at IF = 1A, 8/20µs waveform Junction Capacitance between I/O pins and Gnd VR = 0V, f = 1MHZ
Document Number 88343 06-May-02
www.vishay.com 1
GMS05C
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 Non-Repetitive Peak Pulse Power vs. Pulse Time
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
10 100
Fig. 2 Pulse Derating Curve
PPPM -- Peak Pulse Power (kW)
75
1
50
0.1
25
0.01 0.1
0 1.0 10 100 1000
0
25
50
75
100
125
150
175
td -- Pulse Duration (µs)
TA -- Ambient Temperature (°C)
Fig. 3 Pulse Waveform
110 20 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 18
Fig. 4 Clamping Voltage vs. Peak Pulse Current
IPPM -- Peak Pulse Current, % IRSM
100 90 80 70 60 50 40 30 20 10 0 0 5 10 15
VC -- Clamping Voltage (V)
16 14 12 10 8 6 4 2 0
td = IPP 2
20
25
30
0
5
10
15
20
25
30
t -- Time (µs)
IPP -- Peak Pulse Current (A)
Fig. 5 Typical Junction Capacitance
350
CJ -- Junction Capacitance (pF)
300
250
200
150
100 0 1 2 3 4 5 6
VR -- Reverse Voltage (V)
www.vishay.com 2
Document Number 88343 06-May-02
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