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Part: GS8550xU

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose
         -> PNP

Description:

Company: General Semiconductor

Datasheet: Download GS8550xU datasheet     File size : 1615 kB

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Datasheet text preview:
GS8550xU
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)
Features
· PNP Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output stages such as portable radios in class-B push-pull operation. · Complementary to GS8050xU · The "x" in the part number can be B, C or D, depending on the current gain.
Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk ­ 5K per container, 20K per box E7/4K per Ammo mag., 20K per box
max. 0.022 (0.55) 0.098 (2.5)
Bottom View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range
Ratings at 25°C ambient temperature unless otherwise specified
Symbol VCBO VCEO VEBO IC Ptot RJA Tj TS
Value ­ 40 ­ 25 ­6 ­ 800 625 200
(1) (1)
Unit V V V mA mW °C/W °C °C
150 ­ 55 to +150
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88194 10-May-02
www.vishay.com 1
GS8550xU
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter DC Current Gain Current Gain Group B C D
J
= 25°C unless otherwise noted)
Symbol
Test Condition VCE = ­1V, IC = ­5mA VCE = ­1V, IC = ­100mA
Min 45 85 120 160 -- ­ 25 ­ 40 ­6 -- -- -- -- -- -- --
Typ 135 -- -- -- 30 -- -- -- -- -- ­ 0.51 ­1.25 ­ 0.66 15 100
Max -- 160 200 300 -- -- -- -- ­100 ­100 -- -- ­1.0 -- --
Unit
hFE VCE = ­1V, IC = ­800mA
--
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance Gain-Bandwidth Product
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) COB T
IC = ­2mA, IB = 0 IC = ­100µA, IE = 0 IE = ­100µA, IC = 0 VCB = ­35V, IE = 0 VEB = ­6V, IC = 0 IC = ­800mA, IB = ­80mA IC = ­800mA, IB = ­80mA VCE = ­1V, IC = ­10mA VCB = ­10V, IE = 0 = 1 MHz VCE = ­10V, IC = ­50mA
V V V nA nA V V V pF MHz
www.vishay.com 2
Document Number 88194 10-May-02


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