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Details, datasheet, quote on part number: IRFIZ44N
 
 
Part numberIRFIZ44N
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description
CompanyGeneral Semiconductor
DatasheetDownload IRFIZ44N datasheet
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Specifications, Features, Applications

Features

· Dynamic dv/dt Rating· Repetitive Avalanche Rated· 175°C Operating Temperature· Ease of Paralleling· Fast Switching for High Efficiency· Simple Drive Requirements

Case: JEDEC ITO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17" (4.3mm) from case Mounting Torque: 10 in-lbs maximum Weight: 2.0g

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS =10V Pulsed Drain Current (1) Maximum Power Dissipation Single Pulse Avalanche Energy(2) Avalanche Current(1) Repetitive Avalanche Energy(1) Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance

Notes: (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 25V, starting = 25, IAS = 25A

Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Gate Threshold Voltage Forward Transconductance

Drain-Source Leakage Current Gate-Source Leakage Dynamic Total Gate Charge(1) Gate-Source Charge
Gate-Drain ("Miller") Charge(1) Turn-On Delay Time Rise Time
Turn-Off Delay Time Fall Time(1) Input Capacitance Output Capacitance
Reverse Transfer Capacitance Source-Drain Diode Continuous Source Current Pulsed Source Current
Diode Forward Voltage(1) Source-Drain Reverse Recovery Time

Notes: (1) Pulse width 300µs; duty cycle 2% (2) Repetitive rating; pulse width limited by max. junction temperature





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