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Details, datasheet, quote on part number:MURS120
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Datasheet text preview:
MURS120
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage 200V Forward Current 1.0A Reverse Recovery Time 25ns
Ultrafast Plastic Rectifier
DO-214AA (SMB)
Cathode Band
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
Mounting Pad Layout
0.180 (4.57) 0.160 (4.06)
0.012 (0.305) 0.006 (0.152)
0.106 MAX (2.69 MAX) 0.083 MIN (2.10 MIN) 0.050 MIN (1.27 MIN) 0.220 REF
0.096 (2.44) 0.084 (2.13)
Dimensions in inches and (millimeters)
0.008 (0.203) Max.
0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
Features
· Plastic package has Underwriters Laboratories Flammability Classification 94V-0 · Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes · Ultrafast recovery time for high efficiency · For surface mount applications · Glass passivated junction · High temperature soldering guaranteed: 250°C/10 seconds on terminals
Mechanical Data
Case: JEDEC DO-214AA molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.003 oz., 0.093 g Packaging Codes/Options: 5/3.2K per 13" reel (12mm tape) 2/750 EA per 7" reel (12mm tape)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Device Marking Codes Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 155°C (See figure 1) TL = 145°C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance junction to ambient Operating junction and storage temperature range VRRM VRWM VDC IF(AV) IFSM RJL TJ, TSTG Symbol Value MD 200 200 200 1.0 2.0 40 13 65 to +175°C V V V A A °C/W °C Unit
Electrical Characteristics
Maximum instantaneous forward voltage (1) Maximum instantaneous reverse current at rated DC blocking voltage (1)
Ratings at 25°C ambient temperature unless otherwise specified.
at IF = 1.0A, TJ = 25°C at IF = 1.0A, TJ = 150°C TJ = 25°C TJ = 150°C
VF IR trr trr tfr
0.875 0.71 2.0 50 25 35 25
V µA ns ns ns
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Maximum reverse recovery time at IF = 1.0A, di/dt = 50A/µs, VR = 30V, Irr = 10% IRM Maximum forward recovery time at IF = 1.0A, di/dt = 100A/µs, recovery to 1.0V
Note: (1) Pulse test: tp = 300µs, duty cycle 2%
Document Number 88687 02-Jul-02
www.vishay.com 1
MURS120
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves
(TA = 25°C unless otherwise specified)
Fig. 1 Forward Current Derating Curve
6.0 50
Fig. 2 Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
5.0
40
4.0
30
3.0 2.0 1.0
20
10
0 0 25 50
0 75 100 125 150 175 1 10 100
Lead Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 Typical Instantaneous Forward Characteristics
Instantaneous Reverse Leakage Current (µA)
80 100
Fig. 4 Typical Reverse Leakage Characteristics
Instantaneous Forward Current (A)
10 TJ = 175°C 1 TJ = 100°C
10
TJ = 175°C
1
TJ = 100°C
0.1
0.1
TJ = 25°C
0.01
TJ = 25°C
0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.001 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 Typical Junction Capacitance
1000 TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p
Junction Capacitance (pF)
100
10 0.1 1 10 100
Reverse Voltage (V) www.vishay.com 2 Document Number 88687 02-Jul-02
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