Details, datasheet, quote on part number: SL12ANDSL13
CategoryDiscrete => Diodes & Rectifiers => Protection
DescriptionLow VF Surface Mount Schottky Barrier Rectifier
CompanyGeneral Semiconductor
DatasheetDownload SL12ANDSL13 datasheet


Features, Applications


Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile surface mount package Built-in strain relief Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 250C/10 seconds at terminals

Case: JEDEC DO-214AC molded plastic body Terminals: solder plated, solderable per MILSTD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.002 ounce 0.064 gram

Parameter Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current = 105C (SEE FIG.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum thermal resistance (2) Operating junction temperature range Storage temperature range VRRM VRMS VDC IF(AV) IFSM RJA RJL TJ TSTG

Parameter Maximum instantaneous forward voltage at (NOTE 1)
Maximum DC reverse current at rated DC blocking voltage

Notes: (1) Pulse test: 300s pulse width, 1% duty cycle (2) P.C.B. mounted with x 5.0mm) copper pad areas

Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 2 Maximum Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine Wave (JEDEC Method) at Rated TL


Some Part number from the same manufacture General Semiconductor
SL22 Low VF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 30volts Forward Current - 2.0 Amperes
SL23 Low VF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 30volts Forward Current - 2.0 Amperes
SL42 Low VF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 40volts Forward Current - 4.0 Amperes
SL43 Low VF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 40volts Forward Current - 4.0 Amperes
SM15T100A Transzorb Transient Voltage Suppres
SM15TSeries Transzorb(tm) Surface Mount Transient Voltage Suppressor
SM5A27 Surface Mount Automotive Transient Voltage Suppressor
SM5SSeries Surface Mount Automotive Transient Voltage Suppressor
SM6SSeries Surface Mount Automotive Transient Voltage Suppressor
SM6T100A Transzorb Transient Voltage Suppres
SM6TSeries Transzorb(tm) Surface Mount Transient Voltage Suppressor
SM8A27 Surface Mount Automotive Transient Voltage Suppressor
SMAJ100 Surface Mount Transient Voltage Suppressor
Same catergory

11EQS09 : Device = SBD ;; Ripetitive Peak Reverse Voltage(V) = 90 ;; Average Rectified Current(A) = 1 ;; Condition(cace or Ambient Temperature) = Ta=55 ;; Surge Forward Current(A) = 40 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 0.58 ;; Peak Forward Current(A) = 1 ;; Peak Reverse Current(mA).

2S302A : Screening Options Available = ;; Polarity = NPN ;; Package = TO5 (TO205AA) ;; Vceo = 40V ;; IC(cont) = 0.1A ;; HFE(min) = 15 ;; HFE(max) = 60 ;; @ Vce/ic = 5V / 10mA ;; FT = 0.8MHz ;; PD = 0.3W.

BUK7621-30 : Trenchmos Transistor Standard Level Fet: 30v, 50a. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using 'trench' technology. The device very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in automotive and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON).

IRF840 : 500V Single N-channel HexFET Power MOSFET in a TO-220AB Package.

IRGPS40B120U : 1200V Ultrafast 8-25 KHZ Single Igbt in a TO-274AA Package. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Non Punch Through IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Super-247 Package. Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing.

IXST30N60B : Low Voltage < 600 Volts. High Speed Igbt. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions to 150C; RGE 1 M Continuous Transient 1 ms VGE = 2.7 Clamped inductive load, VCC= 0.8 VCES VGE 15 V, VCE 33 , non repetitive = 25C International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process.

SD553C-S50L : Fast Recovery Diodes. High power FAST recovery diode series 6.0 s recovery time High voltage ratings to 4500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 125C Typical Applications Snubber diode.

SFU9024 : 60V P-channel A-FET / Substitute of IRFU9024. n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 A (Max.) @ VDS -60V n Lower RDS(ON) : 0.206 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain.

BFX88E4 : 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: PNP ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.

C4520CH3F100FB : CAPACITOR, CERAMIC, MULTILAYER, 3000 V, CH, 0.00001 uF, SURFACE MOUNT, 1808. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 3000 volts ; Temperature Coefficient: 60 ppm/°C ; Mounting Style: Surface Mount Technology.

DD360N22A : 360 A, 2200 V, SILICON, RECTIFIER DIODE. s: Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 360000 mA ; RoHS Compliant: RoHS ; Package: MODULE-3 ; Pin Count: 3 ; Number of Diodes: 2.

KU2307Q : 30 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0063 ohms ; Package Type: FLP-8 ; Number of units in IC: 1.

SI-16002 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.

XQFM : RESISTOR, THIN FILM, 0.025 W, 0.1 - 10 %, 25; 50; 100; 250 ppm, 1 ohm - 1000000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 175 C (-67 to 347 F).

250USG220MEFCSN20X30 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250 V, 220 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 220 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 250 volts ; Leakage Current: 704 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).

0-C     D-L     M-R     S-Z