|Category||Discrete => Diodes & Rectifiers => Zener Diodes|
|Description||Silicon Epitaxial Planar Zener Diodes For Stabilized Power Supply|
|Datasheet||Download 1N4728A datasheet
|Cross ref.||Similar parts: BZX85C3V3, 1N5333B, 1N5333BG, HZ5.1BP, HZ4.7BP, 1N4728, 1N4728ARL, 1N4728B, 1N4728RL|
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
Glass package DO-41 structure ensures high reliability. Wide spectrum from 3.3V through 36V of zener voltage provide flexible application.Type No. 1N4728A through 1N4753A Mark Type No. Package Code DO-41
Item Power dissipation Junction temperature Storage temperature Note: 1. See Fig.3 Symbol * Tj Tstg
|Related products with the same datasheet|
|Some Part number from the same manufacture Renesas|
|1N4729A Silicon Epitaxial Planar Zener Diodes For Stabilized Power Supply|
|1N5223B Silicon Epitaxial Planar Zener Diodes For Voltage Regulation|
|1S2076 High Frequency Small Signal Diode|
|1SS106 High Frequency Schottky Barrier Diode For Detection And Mixer|
|1SS108 Silicon Schottky Barrier Diode For Various Detector, High Speed Switching|
|1SS110 Silicon Epitaxial Planar Diode For Tuner Band Switch|
|1SS118 Silicon Epitaxial Planar Diode For High Speed Switching|
|1SS119 High Frequency Small Signal Diode|
|1SS165 Silicon Schottky Barrier Diode For Catv Balanced Mixer|
|1SS174 Silicon Schottky Barrier Diode For UHF TV Tuner Mixer, Various Detector, High Speed Switching|
|1SS198 High Frequency Schottky Barrier Diode For Detection And Mixer|
|1SS199 Silicon Schottky Barrier Diode For Various Detector, High Speed Switching|
|1SS270 Silicon Epitaxial Planar Diode For High Speed Switching|
2DI200D-100 : Power Transistor Module. For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, 972-233-1589 972-233-0481 Fax http://www.collmer.com .
2SK2045LS : . Low ON-resistance. Ultrahigh-speed switching. High-speed diode (trr=140ns). Micaless package facilitating mounting. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Conditions 2.55 Parameter.
CZR1-04C : . CZR1-04C SURFACE MOUNT HIGH VOLTAGE DUAL COMMON CATHODE SILICON RECTIFIER : The CENTRAL SEMICONDUCTOR CZR1-04C type is a Silicon General Purpose Dual Rectifier, connected in a Common Cathode configuration, designed for applications requiring high voltage capability. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS (TA=25°C) Reverse Voltage Peak Reverse.
FR203 : Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 200 ;; Max. Aver. Rect. Current io (A)= 2 ;; Ifsm (A)= 60.
MLL958B : Leadless Glass Zener Diode Surface Mount. Leadless Package For Surface Mount Technology Ideal For High Density Mounting Voltage Range To 200 Volts Hermetically Sealed, Double Slug Glass Construction Metallurgically Bonded Construction Available as Dash One. Available in JAN, JTX, Mil-PRF-19500/117 (UR-1 Suffix) mW DC Power Dissipation (See Power Derating Curve In Figure to +175°C Operating.
MS1619 : Microwave. RF NPN Transistor. NPN OVERLAY GEOMETRY CLASS A OPERATION EXCELLENT INTERMODULATION CHARACTERISTICS 40-880 MHz OPERATION COMMON EMITTER CONFIGURATION THE IS AN OVERLAY NPN SILICON TRANSISTOR IN A JEDEC TO-39 METAL CASE. THE MS1619 OFFERS EXTREMELY GOOD INTERMODULATION PROPERTIES AND HIGH POWER GAIN. THE DEVICE IS PRIMARILY INTENDED FOR FINAL AND DRIVER STAGES IN CHANNEL.
MZP4744A : 1 to 3 Watt Surmetic 30 Silicon Zener Diodes. to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP . a complete series to 3 Watt Zener Diodes with limits and operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an axial-lead, transfer-molded plastic package offering protection.
SEMB4 : PNP Silicon Digital Transistor Array Preliminary Data. PNP Silicon Digital Transistor Array Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor R1 =10k) Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Collector-emitter voltage Collector-base voltage Emitter-base voltage Input.
050021R8ADMP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000018 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.80E-6 microF ; Capacitance Tolerance: 28 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface.
05002-1R8ADZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000018 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.80E-6 microF ; Capacitance Tolerance: 28 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface Mount Technology.
057681T025GE0 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 680 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 680 microF ; Capacitance Tolerance: 50 (+/- %) ; WVDC: 25 volts ; Leakage Current: 34 microamps ; ESR: 290 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67.
IRL450 : 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0770 ohms ; Package Type: TO-220, TO-220AB, 3 PIN ; Number of units in IC: 1.
SQPR52K2J : RESISTOR, METAL OXIDE FILM, 5 W, 5 %, 300 ppm, 2200 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalOxide ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 2200 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 Â±ppm/Â°C ; Power Rating: 5 watts.
31757R : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.