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Details, datasheet, quote on part number:1N4747A
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| Part: | 1N4747A |
| Category: | Discrete => Diodes & Rectifiers => Zener Diodes |
| Description: | Silicon Epitaxial Planar Zener Diodes For Stabilized Power Supply |
| Company: | Renesas |
| Datasheet: | Download 1N4747A datasheet File size : 87 kB |
| Request For quote: | Find where to buy 1N4747A
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Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
1N4728A through 1N4753A
Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
ADE-208-136C (Z) Rev.3 Sep. 2000 Features
· Glass package DO-41 structure ensures high reliability. · Wide spectrum from 3.3V through 36V of zener voltage provide flexible application.
Ordering Information
Type No. 1N4728A through 1N4753A Mark Type No. Package Code DO-41
Pin Arrangement
1 Type No. Cathode band
2
1. Cathode 2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note: 1. See Fig.3 Symbol Pd * Tj Tstg
1
Value 1.0 200 -65 to +200
Unit W °C °C
1N4728A through 1N4753A
Electrical Characteristics
(Ta = 25°C)
VZ (V) *
1
IR (µA) µ Test Condition Test Condition Max 100 100 50 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4
ZZT () Test Condition Max 10 10 9 9 8 7 5 2 3.5 4 4.5 5 7 8 9 10 14 16 20 22 23 25 35 40 45 50 IZT (mA) 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14.0 12.5 11.5 10.5 9.5 8.5 7.5 7.0
ZZK () Test Condition Max 400 400 400 400 500 550 600 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 750 1000 1000 1000 IZK (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
I RSM (mA)*
2
Type No. 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4753A
Max 3.3 ± 5 (%) 3.6 ± 5 (%) 3.9 ± 5 (%) 4.3 ± 5 (%) 4.7 ± 5 (%) 5.1 ± 5 (%) 5.6 ± 5 (%) 6.2 ± 5 (%) 6.8 ± 5 (%) 7.5 ± 5 (%) 8.2 ± 5 (%) 9.1 ± 5 (%) 10 ± 5 (%) 11 ± 5 (%) 12 ± 5 (%) 13 ± 5 (%) 15 ± 5 (%) 16 ± 5 (%) 18 ± 5 (%) 20 ± 5 (%) 22 ± 5 (%) 24 ± 5 (%) 27 ± 5 (%) 30 ± 5 (%) 33 ± 5 (%) 36 ± 5 (%)
IZ (mA) 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14.0 12.5 11.5 10.5 9.5 8.5 7.5 7.0
Max 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 170 150 135 125
Notes: 1. Tested with DC 2. t = 1/120 sec reverse direction 1pulse
Rev.3, Sep. 2000, page 2 of 6
1N4728A through 1N4753A
Main Characteristic
1N4730A 1N4730A 1N4732A 1N4734A 1N4736A 1N4738A 1N4739A 1N4740A
100
Zener Current I Z (mA)
80
60
1N4749A
1N4746A
1N4747A
1N4748A
1N4750A
1N4751A
1N4752A
20
0 10 20 Zener Voltage VZ (V) Fig.1 Zener current Vs. Zener voltage 30 40
1N4728A
0.10
Zener Voltage Temperature Coefficient z (%/°C)
50 40 30 20
mV/°C
Zener Voltage Temperature Coefficient z (mV/°C)
1.0
0.08 0.06 0.04 0.02 0
%/°C
0.8
Power Dissipation P (W) d
1N4753A
40
1N4 741 1N4 A 742 1N4 A 743 A 1N 1N4 4744A 745 A
10mm land 20mm land
10
0.6
-0.02 -0.04 -0.06 -0.08 -0.1 0 20 10 30 Zener Voltage V Z (V)
-10 -20 -30 -40 -50 40
0.4
3/8inch 10 mm or 20mm
0.2
Printed circuit board 100 ×180 ×1.6t mm Material: Glass epoxy
0 0 100 150 Ambient Temperature Ta (°C) 50 200
Fig.2 Temperature Coefficient Vs. Zener voltage
Fig.3 Power Dissipation Vs. Ambient Temperature
Rev.3, Sep. 2000, page 3 of 6
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