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Details, datasheet, quote on part number:1S2076
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Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
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1S2076
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-145B (Z) Rev.2 Oct. 2000 Features
· Low capacitance. (C = 3.0 pF max) · Short reverse recovery time. (trr = 8.0 ns max) · High reliability with glass seal.
Ordering Information
Type No. 1S2076 Cathode band Light Blue Package Code DO-35
Pin Arrangement
1 Cathode band
2
1. Cathode 2. Anode
1S2076
Absolute Maximum Ratings
(Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IFM IFSM * IO Pd Tj Tstg Value 35 30 450 1 150 250 175 -65 to +175 Unit V V mA A mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C trr * Min 0.64 Typ Max 0.8 0.1 3.0 8.0 Unit V µA pF ns Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = IR =10 mA, Irr = 1 mA
Note: Reverse recovery time test circuit
DC Supply
0.1µF
3k
Sampling Rin = 50 Oscilloscope
Ro = 50 Pulse Generator
Trigger
Rev.2, Oct. 2000, page 2 of 2
1S2076
Main Characteristic
10-1 10-4 Ta = 125°C
10-5 10-2
125 °C Ta = 75°C Ta = 25°C Ta = -25°C
Reverse current IR (A)
Forward current IF (A)
10-6
Ta = 75°C
Ta =
10-7 Ta = 25°C 10-8
10
-3
10-4
0
0.4 0.6 1.0 0.2 0.8 Forward voltage VF (V)
1.2
10-9
0
10 20 30 40 Reverse voltage VR (V)
50
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
10 Reverse voltage VR (V)
100
Fig.3 Capacitance Vs. Reverse voltage
Rev.2, Oct. 2000, page 3 of 3
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