|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal General Purpose Transistor|
|Datasheet||Download 2SC2463 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
|Some Part number from the same manufacture Renesas|
|2SC2471 Small Signal High Frequency Amplifier Transistor|
|2SC2543 Small Signal General Purpose Transistor|
|2SC2610 Silicon NPN High Voltage Transisor|
|2SC2611 Bipolar Power General Purpose Transistor|
|2SC2612 Bipolar Power Switching Transistor|
|2SC2618 Small Signal General Purpose Transistor|
|2SC2619 Small Signal High Frequency Amplifier Transistor|
|2SC2734 Small Signal High Frequency Amplifier Transistor|
|2SC2816 Bipolar Power Switching Transistor|
|2SC2853 Small Signal General Purpose Transistor|
|2SC2898 Bipolar Power Switching Transistor|
HZM6.8FA : Silicon Epitaxial Planar Zener Diode For Surge Absorb
HAT2088R-EL-E : Silicon N Channel MOS FET High Speed Power Switching
M38510E5-SP : Single-chip 8-bit CMOS Microcomputer
HA178L06PA-TZ : 3-terminal Fixed Voltage Regulators
M38508E1-XXXFP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series
M38027M6DXXXSS : 8-bit Single-chip Microcomputer 740 Family / 38000 Series
HA17384SPS-E : 1 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDIP8 Specifications: Configuration / Function: SINGLE ; Package Type: DIP, Other, 6.30 X 9.60 MM, 2.54 MM PITCH, PLASTIC, DIP-8 ; Life Cycle Stage: ACTIVE ; IOUT: 1 amps ; VIN: 15 volts ; fsw: 500 kHz ; Operating Temperature: -20 to 105 C (-4 to 221 F)
HD6413003RF : 32-BIT, 16 MHz, MICROCONTROLLER, PQFP80 Specifications: Data Bus: 16 Bit ; Life Cycle Stage: ACTIVE ; Clock Speed: 16 MHz ; Supply Voltage: 4.5 to 5.5 volts ; I/O Ports: 32 ; Package Type: QFP, Other, QFP-80 ; Operating Range: Industrial ; Pin Count: 80 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Features: PWM
HZS5.1NB3TA : 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34 Specifications: Diode Type: VOLTAGE REGULATOR DIODE
NE3509M04-T2B-A : S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET Specifications: Transistor Type / Technology: HFET ; Polarity: N-Channel ; Package Type: LEAD FREE, THIN, SUPER MINIMOLD PACKAGE-4 ; Number of units in IC: 1 ; Power Gain: 16 dB
UPD44165182BF5-E35Y-EQ3-A : 2M X 8 STANDARD SRAM, 15 ns, PDSO54 Specifications: Memory Category: SRAM Chip ; Density: 16777 kbits ; Number of Words: 2000 k ; Bits per Word: 8 bits ; Package Type: TSOP, 0.400 INCH, PLASTIC, TSOP2-54 ; Pins: 54 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 15 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)
UPD44325092BF5-E40-FQ1-A : 2M X 18 ZBT SRAM, 6.5 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 37749 kbits ; Number of Words: 2000 k ; Bits per Word: 18 bits ; Package Type: 15 X 17 MM, PLASTIC, FBGA-165 ; Pins: 165 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 6.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)
2N5785SMD : Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 65V ;; IC(cont) = 3.5A ;; HFE(min) = 20 ;; HFE(max) = 100 ;; @ Vce/ic = 2V / 1.2A ;; FT = 8MHz ;; PD = 10W.
2SC2631 : VCEO(V) = 150 ;; IC(A) = 0.05 ;; HFE(min) = 130 ;; HFE(max) = 330 ;; Package = TO-92-A1TO-92-B1.
BUK455-200A/B : Powermos Transistor: 200v, 14/13a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK455 Drain-source voltage Drain current (DC).
CSHDD16-100C : 5 to 100 Amp. 100 V, Silicon Schottky Rectifier Dual, Common Cathode. CSHDD16-60C CSHDD16-100C SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS DUAL, COMMON CATHODE 16 AMP, 40 THRU 100 VOLTS HIGH CURRENT CAPABILITY UL FLAMMABILITY CLASSIFICATION 94V-O LOW POWER LOSS, HIGH EFFICIENCY LOW FORWARD VOLTAGE HIGH SURGE CAPACITY SUPERIOR LOT TO LOT CONSISTENCY : The CENTRAL SEMICONDUCTOR CSHDD16-40C Series types are Silicon Schottky.
FQI6N25 : 250V N-channel QFET.
FS3UM-10 : Type = Planar Process=>200V ;; Voltage = 500V ;; Rdson = 4400 ;; Package = Obsolete ;; Drive Voltage = N/a.
FY7BCH-02A : N-channel Power MOSFET High-speed Switching Use: 20v, 7a. . ation change. ecific nal sp subject re is nic limits Th tr Notice parame Som APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel.
G3SBA20ANDG3SBA60 : . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High case dielectric strength of 1500 VRMS Ideal for printed circuit boards Glass passivated chip junction High surge current capability Polarity shown on front side of case, positive lead by beveled corner Lead forming option with 10mm-7.5mm spacing is available. Dimensions.
HSMBJ5913B : Zener Voltage Regulator Diode, Package : DO-214AA. Surface mount equivalent to 1N5913B thru 1N5956B Popular HSMBJ Package outline-Small and Rugged Zener voltage to 200V Constructed with an Oxide Passivated All Diffused Die Junction and Storage Temperature: +150°C DC Power Dissipation W at Lead Temp. TL 75°C Derate above +75°C: 40 mW/°C Forward voltage 200mA: 1.2Volts and = 30°C Case: Similar to DO-214AA.
SR3010 : Package Type : DO-201AD, if : 3.0A, VRM : 100V. Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability Operating Temperature: to +125°C Storage Temperature: to +150°C Maximum Thermal Resistance; 30 °C/W Junction To Ambient Device Marking Maximum Recurrent Peak Reverse Voltage 80V 100V Maximum RMS Voltage Maximum DC Blocking Voltage 80V 100V Average Forward.
STGD7NB60S : N-channel 7A - 600V Dpak Powermesh Igbt. HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM.
ZXTN25020DFL : Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents..
03028-BR471BKZP : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BR, 0.00047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 4.70E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.
BAV19WRH : 0.2 A, 250 V, SILICON, SIGNAL DIODE. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 200 mA.
ED502S-G : 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA. s: Package: DPAK, GREEN, PLASTIC, DPAK-3 ; Number of Diodes: 1 ; VRRM: 200 volts ; IF: 5000 mA ; trr: 0.0350 ns ; RoHS Compliant: RoHS.
FMP13N60E : 13 A, 600 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.5800 ohms ; PD: 2020 milliwatts ; Package Type: TO-220, ROHS COMPLIANT, TO-220F, 3 PIN ; Number of units in IC: 1.
MV2N4416A : POWER, FET, TO-72. s: Package Type: TO-72, 4 PIN. ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation = +25°C(1) Operating Junction & Storage Temperature Range (1) Derate linearly 1.7 mW/°C for > +25°C. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters.
NVD20N03L27T4G : POWER, FET. This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. Ultra-Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode.
SML5082-2800CSM : SIGNAL DIODE. s: Diode Type: General Purpose.
2SC5509-FB : L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: THIN, SUPER MINIMOLD, M04, 4 PIN ; Number of units in IC: 1 ; Operating Frequency: 15000 MHz.