|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal High Frequency Amplifier Transistor|
|Datasheet||Download 2SC2512 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
|Some Part number from the same manufacture Renesas|
|2SC2543 Small Signal General Purpose Transistor|
|2SC2610 Silicon NPN High Voltage Transisor|
|2SC2611 Bipolar Power General Purpose Transistor|
|2SC2612 Bipolar Power Switching Transistor|
|2SC2618 Small Signal General Purpose Transistor|
|2SC2619 Small Signal High Frequency Amplifier Transistor|
|2SC2734 Small Signal High Frequency Amplifier Transistor|
|2SC2816 Bipolar Power Switching Transistor|
|2SC2853 Small Signal General Purpose Transistor|
|2SC2898 Bipolar Power Switching Transistor|
2SJ351 : Power General Purpose MOSFET
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R5F56218BDFP : 32-BIT, FLASH, 100 MHz, MICROCONTROLLER, PBGA176 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 14 MHz ; ROM Type: Flash ; Supply Voltage: 2.7 to 3.6 volts ; I/O Ports: 123 ; Package Type: Other, 13 X 13 MM, 0.80 MM PITCH, LFBGA-176 ; Operating Range: Industrial ; Pin Count: 176 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Featur
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JANSR2N7278 : 4a, 250v, 0.700 Ohm, Rad Hard, N-channel Power MOSFET. The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose.
MA3X721 : VRM(V) = 30 ;; IF(mA) = 200 ;; VFmax.(V) = 0.55 ;; IR(µA) = 50 ;; Package = Mini3-G1.
MMBZ5233B : 6.0V, 0.35W Zener Diode. Power Dissipation Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed.
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0603B911J101C : CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.00091 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 9.10E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting.
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CWR06FB105KSB/HR : CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 1 uF, SURFACE MOUNT, 1005. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 1 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 10 volts ; Leakage Current: 1 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 1005 ; Operating.
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DCT9 : CAPACITOR, TANTALUM, SOLID. Hermetically sealed silver cases Axial leads - Polarized types Operating temperature Humidity Capacitance range Tolerance Voltage range +125°C 56 days V150 V Maximum capacitance change see table see table see table Maximum DF see table = lim 20°C = lim 20°C Maximum impedance -55°C see table Maximum leakage current +20°C +85°C +125°C 56 days V150 V see table.
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