Details, datasheet, quote on part number: 2SC2734
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionSmall Signal High Frequency Amplifier Transistor
DatasheetDownload 2SC2734 datasheet
Cross ref.Similar parts: 2SC3015
Find where to buy


Features, Applications

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page:

Renesas Technology Corp. Customer Support Dept. April 1, 2003

Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page ( 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.

UHF frequency converter Local oscillator, wide band amplifier


Some Part number from the same manufacture Renesas
2SC2735 Small Signal High Frequency Amplifier Transistor
2SC2816 Bipolar Power Switching Transistor
2SC2853 Small Signal General Purpose Transistor
2SC2898 Bipolar Power Switching Transistor
2SC3004 Silicon NPN Epitaxial
2SC3127 Small Signal High Frequency Amplifier Transistor
2SC3322 Silicon NPN Triple Diffused
2SC3336 Bipolar Power Switching Transistor
2SC3338 Small Signal High Frequency Amplifier Transistor
2SC3365 Bipolar Power Switching Transistor
2SC3380 Small Signal General Purpose Transistor
2SC3391 Small Signal High Frequency Amplifier Transistor
2SC3413 Small Signal General Purpose Transistor
2SC3494 Small Signal High Frequency Amplifier Transistor

M38D2F4XXXFP : Single-chip 8-bit CMOS Microcomputer

HD74LV166AFPEL : Dual Unbuffer Inverter

M38D56FBXXXFP : Single-chip 8-bit CMOS Microcomputer

M38K03F9HP : Renesas 8-bit Single-chip Microcomputer 740 Family / 38000 Series

R5F212L2SDFP#V2 : Embedded - Microcontroller Integrated Circuit (ics) Internal Tray 2.2 V ~ 5.5 V; MCU 1KB FLASH 8K ROM 32-LQFP Specifications: Program Memory Size: 8KB (8K x 8) ; RAM Size: 1K x 8 ; Number of I /O: 25 ; Package / Case: 32-LQFP ; Speed: 20MHz ; Oscillator Type: Internal ; Packaging: Tray ; Program Memory Type: FLASH ; EEPROM Size: - ; Core Processor: R8C ; Data Converters: A/D 9x10b ; Core Size: 16-Bit ; Oper

HD6433686XXXH : 16-BIT, MROM, 20 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 20 MHz ; ROM Type: MROM ; Supply Voltage: 4 to 5.5 volts ; I/O Ports: 53 ; Package Type: LFQP, Other, 10 X 10 MM, 0.50 MM PITCH, LQFP-64 ; Operating Range: Commercial ; Pin Count: 64 ; Operating Temperature: -20 to 75 C (-4 to 167 F) ; Features

HD6473827RE : MICROCONTROLLER Specifications: Life Cycle Stage: ACTIVE

UPD44321362GF-A44-A : 2M X 18 ZBT SRAM, 6.5 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 37749 kbits ; Number of Words: 2000 k ; Bits per Word: 18 bits ; Package Type: 15 X 17 MM, PLASTIC, FBGA-165 ; Pins: 165 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 6.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

Same catergory


2SJ344 : P-channel MOS Type ( High Speed Switching, Anarog Switch Applicatios ).

BAS16W/T1 : Diode Sot-323. Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching in hybrid thick and thin-film circuits. Marking code: A6p = made in Hong Kong; A6t = made in Malaysia. The is a high-speed switching.

BYM357DX : BYM357DX; Damper-modulator Fast, High-voltage. Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Isolated mounting tab Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM357DX contains diodes with performance characteristics designed specifically for applications from.

BYV26DGP : Glass Passivated. Glass Passivated Ultrafast Rectifier Patented. High temperature metallurgically bonded construction Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Cavity-free glass passivated junction Ultrafast recovery time for high efficiency Low forward voltage, high current capability Capable of meeting environmental standards of MIL-S-19500 Low leakage current High surge current.

CN2406500N : Super Fast Recovery Dual Diode Modules 50 Amperes/300-600 Volts. Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania (724) 925-7272 Super Fast Recovery Dual Diode Modules CC24_ _500N Super Fast Recovery Dual Diode Modules 50 Amperes/300-600 Volts : Powerex Super Fast Recovery Dual Diode Modules are designed for use in applications requiring high speed rectification or voltage clamping in isolated packaging.

ZY-GP : Pot (W) = 2 ;; VZ(V) = 6V2 200. Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 C. 3. Max. soldering time, 3.5 sec. 4. Do not bend lead at a point closer than 2 mm. to the body. Glass passivated junction The plastic material carries U/L recognition 94 V-0 Terminals: Axial Leads Polarity: Color band denotes cathode Ptot PZSM.

NSS35200MR6T1G : 35V 2A LOW VCE(sat) PNP High Current Transistor Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. and Applications.

B250C1500-LF : 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 50000 mA ; VBR: 600 volts ; RoHS Compliant: RoHS ; Package: ROHS COMPLIANT, PLASTIC, WOB, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.

CY18X12X10A : 1 ELEMENT, 400 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: AMORPHOUS MAGNETIC ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 400 microH ; Inductance Tolerance: 25 (+/- %) ; Rated DC Current: 3000 milliamps.

FDC6306PD84Z : 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.1700 ohms ; Package Type: SUPERSOT-6 ; Number of units in IC: 2.

WW10X : RESISTOR, METAL GLAZE/THICK FILM, 0.33 W, 1; 5 %, 200 ppm, 0.1 ohm - 0.976 ohm, SURFACE MOUNT, 1210. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Operating DC Voltage: 200 volts ; Operating Temperature: -55 to 155 C (-67 to 311 F).

171222J630B : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 630 V, 0.0022 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.0022 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 630 volts ; Mounting Style: Through Hole.


894T1005LF : 1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, Flying ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 10000 microH ; Operating Temperature: -55 to 125 C (-67 to 257 F).

0-C     D-L     M-R     S-Z