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Part: 2SC2898
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: Bipolar Power Switching Transistor
Company: Renesas
Datasheet: Download 2SC2898 datasheet File size : 166 kB
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Datasheet text preview:
2SC2898
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
23
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg
1
Ratings 500 400 7 8 16 4 50 150 55 to +150
Unit V V V A A A W °C °C
2SC2898
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ -- -- Max -- -- Unit V V Test conditions I C = 0.2 A, RBE = , L = 100 mH I C = 8 A, IB1 = 1.6 A, I B2 = 0.8 A, VBE = 5 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = VCE = 5 V, IC = 4 A*1 VCE = 5 V, IC = 8 A*1 V V µs µs µs I C = 8 A, IB1 = IB2 = 1.6 A, VCC 150 V I C = 4 A, IB = 0.8 A*1
V(BR)EBO I CBO I CEO
7 -- -- 15 7 -- -- -- -- --
-- -- -- -- -- -- -- -- -- --
-- 50 50 -- -- 1.0 1.5 0.8 2.0 0.8
V µA µA
DC current transfer ratio
hFE1 hFE2
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
VCE(sat) VBE(sat) t on t stg tf
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 100 IC(peak) Collector current IC (A)
Area of Safe Operation
µs 25 µs 50 µs 0 25 ms 1
10
IC(max)(Continuous)
40
PW =
DC
1.0
10 m s
Op er at
20
ion (T C = 25 ) °C
0.1 Ta = 25°C, 1 Shot
0.01 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V)
2
2SC2898
Collector Current Derating Rate 100 Collector current derating rate (%) Thermal resistence j-c (°C/W) 10 3 1.0 0.3 0.1 0.03 TC = 25°C 0.01 0.01 0.01 0.1 0.1 1.0 1.0 10 (s) 10 (ms)
1 s 0µ 10 ms
10 ms 10 s
Transient Thermal Resistance
80
IS
/B
Lim
60
it A
re
a
40
20
0
50 100 Case temperature TC (°C)
150
Reverse Bias Area of Safe Operation 20 Collector to emitter voltage V(BR)CER (V) 600
Collector to Emitter Voltage vs. Base to Emitter Resistance IC = 1 mA
Collector current IC (A)
16
300 V, 16 A
500
12 400 V, 8A 450 V, 1.5 A
8
400
4
IB2 = 0.8 A
0
200 500 100 300 400 Collector to emitter voltage VCE (V)
300 100 1k 10 k 100 k 1M Base to emitter resistance RBE ()
3
2SC2898
Typical Output Characteristics 5 5
6 0. 0.5 0.4 0.3
Typical Transfer Characteristics TC = 25°C VCE = 5 V Collector current IC (A) 4
Collector current IC (A)
4 0.2 3 0.1 2 0.05 A
3
2
1 IB = 0 0
TC = 25°C
1
1 3 4 2 5 Collector to emitter voltage VCE (V)
0
0.4 1.2 1.6 0.8 2.0 Base to emitter voltage VBE (V)
Collector to emitter saturation voltage VCE(sat) (V)
DC Current Transfer Ratio vs. Collector Current 100 DC current transfer ratio hFE
75°C 25°C
TC = 25° C
Collector to Emitter Saturation Voltage vs. Base Current 10 3 1.0 0.3 0.1 0.03 TC = 25°C 0.01 0.01 0.03 0.1 0.3 1.0 3 Base current IB (A) 10 IC = 1 A 2A 5A
30
10
3 VCE = 5 V 1 0.01 0.03 0.1 0.3 3 1.0 Collector current IC (A) 10
4
2SC2898
Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) TC = 25°C IC = 5 IB Switching time t (µs) 10 3 1.0 0.3 0.1 0.03 tstg Switching Time vs. Collector Current
tf ton
IC = 5 IB1 = 5 IB2 . VCC = 150 V . 10
10
0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A)
Switching Time vs. Case Temperature 5 3 Switching time t (µs) tstg 1.0 tf 0.3 ton IC = 8 A IB1 = IB2 = 1.6 A RL = 19 . VCC = 150 V . 0 25 75 100 50 Case temperature TC (°C) 125
0.1 0.05
5
Others parts begin by 2s
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