|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal High Frequency Amplifier Transistor|
|Datasheet||Download 2SC4126 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.Application
|Some Part number from the same manufacture Renesas|
|2SC4196 Small Signal High Frequency Amplifier Transistor|
|2SC4366 Small Signal General Purpose Transistor|
|2SC4416 Small Signal High Frequency Amplifier Transistor|
|2SC4499 Silicon NPN Triple Diffused|
|2SC4500 Silicon NPN Epitaxial|
|2SC4537 Small Signal High Frequency Amplifier Transistor|
|2SC458 Small Signal General Purpose Transistor|
|2SC4589 Silicon NPN Triple Diffused|
2SB1570 : Darlington Silicon PNP Epitaxial Planar Transistor. Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions 230typ V MHz pF Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose VCC (V) 10 IC (A) 7 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs).
2SC5849 : Small Signal Bip-TRSs for High Frequency Amplifier. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
2SK2101-01MR : N-channel MOS-FET. High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS ± 30V Guarantee Avalanche Proof Switching Regulators UPS DC-DC converters General Purpose Power Amplifier - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20K) Continous Drain Current Pulsed.
BY228 : BY228; Damper Diode;; Package: SOD64. Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack Also available with preformed leads for easy insertion. APPLICATIONS Damper diode in high frequency horizontal deflection circuits to 16 kHz. Rugged glass package, using a high temperature alloyed construction. This package is hermetically.
FDW2506P : Dual P-channel 2.5V Specified Powertrench MOSFET. This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 12V). Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON).
FQP13N06 : 60V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.
IRFI630G : 200V Single N-channel HexFET Power MOSFET in a TO-220 Fullpak (ISO) Package.
SMCJ33CA : 1500 Watt Transient Voltage Suppressors. Glass passivated junction. 1500 W Peak Pulse Power capability Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 µA above 10V. UL certified, UL #E210467. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL.
SRTA : Surface Mount Fast Recovery Rectifier. High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram Dimensions.
AP4502AGM-HF : 20 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0180 ohms ; PD: 2000 milliwatts ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SOP-8 ; Number of units in IC: 2.
IN08032 : 1 ELEMENT, 0.22 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose ; Inductance Range: 0.2200 microH ; Rated DC Current: 33000 milliamps.
IRG7IC28UPBF : 25 A, 600 V, N-CHANNEL IGBT, TO-220AB. s: Polarity: N-Channel ; Package Type: TO-220, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 ; Number of units in IC: 1.
SMW2R82JT : RESISTOR, WIRE WOUND, 2 W, 5 %, 200 ppm, 0.82 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 0.8200 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 200 Â±ppm/Â°C ; Power Rating: 2 watts (0.0027.
X93256UV14IZ-2.7T1 : DUAL 50K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO14. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 4.40 MM, ROHS COMPLIANT, PLASTIC, MO-153AC, TSSOP-14 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards and Certifications: RoHS.
2SK1067-3 : VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Depletion ; V(BR)DSS: 16 volts ; PD: 150 milliwatts ; Package Type: MCP, 3 PIN ; Number of units in IC: 1.
8101MMF2230LK000 : CAP,AL2O3,100UF,350VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.