Details, datasheet, quote on part number: 2SC4264
Part2SC4264
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionSmall Signal High Frequency Amplifier Transistor
CompanyRenesas
DatasheetDownload 2SC4264 datasheet
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Features, Applications

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp. Customer Support Dept. April 1, 2003

Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.


 

Some Part number from the same manufacture Renesas
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2SC4367
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2SC4462
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2SC4500 Silicon NPN Epitaxial
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2SC458K
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2SC4592
2SC4593
2SC460
Same catergory

2SA1188 : Small Signal General Purpose Transistor. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

CZTA42 : . : The CENTRAL SEMICONDUCTOR CZTA42, CZTA92 types are complementary surface mount epoxy molded silicon planar epitaxial transistors designed for high voltage applications. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation.

ICTE-10 : Transzorb Transient Voltage Suppressors. Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 1500W peak pulse power capabililty with a 10/1000s waveform, repetition rate (duty cycle): 0.05% Excellent clamping capability Low incremental surge resistance Very fast response time Ideal for data and bus line applications High temperature soldering.

06035G332ZAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 50 V, Y5V, 0.0033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0033 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

0805N111K500NHT : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.00011 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.10E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

BUX47A.MOD : 9 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

D2201UKG4 : UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; Package Type: ROHS COMPLIANT, CERAMIC, DP, 2 PIN ; Number of units in IC: 1.

FST19345A : 150 A, 45 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 150000 mA ; Package: ROHS COMPLIANT PACKAGE-9 ; Pin Count: 9 ; Number of Diodes: 2.

M55342K01 : RESISTOR; JUMPER, THIN FILM, 0.02 W, 0.1; 1; 2; 5; 10 %, 100 ppm, 5.6 ohm - 1000000 ohm, SURFACE MOUNT, 0502. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 40 volts ; Operating Temperature: -55 to 150 C (-67 to 302 F).

OP0805 : CAPACITOR, CERAMIC, MULTILAYER, 25; 50 V, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

VSMD400AW60 : 200 A, 600 V, SILICON, RECTIFIER DIODE, TO-244. s: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, High Voltage ; IF: 200000 mA ; Package: ROHS COMPLIANT PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 2.

2SA1778-2 : VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: CP, 3 PIN ; Number of units in IC: 1 ; Operating Frequency: 1200 MHz.

2SC2958-K : 500 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, is a valid Renesas Electronics document. We appreciate your understanding. Issued by: Renesas Electronics Corporation.

9C12063A3300JLPFT : RES,SMT,THIN FILM,330 OHMS,200WV,5% +/-TOL,-200,200PPM TC,1206 CASE. s: Category / Application: General Use.

 
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