Details, datasheet, quote on part number: 2SC4308
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionSmall Signal High Frequency Amplifier Transistor
DatasheetDownload 2SC4308 datasheet
Find where to buy


Features, Applications

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page:

Renesas Technology Corp. Customer Support Dept. April 1, 2003

Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page ( 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.


Some Part number from the same manufacture Renesas
2SC4366 Small Signal General Purpose Transistor
2SC4416 Small Signal High Frequency Amplifier Transistor
2SC4499 Silicon NPN Triple Diffused
2SC4500 Silicon NPN Epitaxial
2SC4537 Small Signal High Frequency Amplifier Transistor
2SC458 Small Signal General Purpose Transistor
2SC4589 Silicon NPN Triple Diffused
2SC458LG Small Signal General Purpose Transistor
2SC4591 Small Signal High Frequency Amplifier Transistor
Same catergory

10EDB60 : Device = Diode ;; Ripetitive Peak Reverse Voltage(V) = 600 ;; Average Rectified Current(A) = 1 ;; Condition(cace or Ambient Temperature) = Ta=39:with P.C.B. ;; Surge Forward Current(A) = 45 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Reverse Current(mA) = 0.01 ;; Peak Forward Voltage(V) = 1 ;; Peak.

10ETF10S : 1000V Fast Recovery Diode in a D2-Pak Package. The 10ETF.S fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: output rectification and freewheeling in inverters, choppers.

1N5555 : Transient Voltage Suppressor, Package : DO-13.

2SK1382 : N-channel MOS Type ( High Speed Switching, Relay Drive, Motor Drive And DC-DC Converter Applications ).

BAT54AW : Small Signal Schottky Diode. AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE BAT54W Schottky barrier diodes encapsulated either or SOD-323 small SMD packages. Single and double diodes with different pining are available. BAT54J SOD-323 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Continuous.

KTN2907AS : = Switching Transistor ;; Package = SOT-23. GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. Low Leakage Current CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO PC Tj Tstg RATING KTN2907AS -60 UNIT mA mW CHARACTERISTIC Collector Cut-off.

MS4550 : Microwave. N Channel MOSFET. The is a gold metallized N-Channel Enhancement Mode MOSFET. The MS4550 is intended for use in 50 Vdc large signal applications to 175 MHz. Drain - Source Voltage Drain - Gate Voltage Gate - Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature RTH(j-c) Junction - Case Thermal Resistance 1.52 C/W V(BR)DSS IDSS IGSS.

UFS30 : Discrete, Diodes, Standard, Surface Mount. n LOW COST n LOW LEAKAGE n HIGH SURGE CAPABILITY n MEETS UL 94V-0 UFS30. 36 Series Maximum Ratings Peak Repetitive Reverse VoltageVRRM RMS Reverse VoltageVR(rms) DC Blocking VoltageVDC Average Forward Rectified CurrentIF(av) = 55C Non-Repetitive Peak Forward Surge CurrentIFSM @ Rated Current & Temp Operating & Storage Temperature RangeTJ, TSTRG Electrical.

0826-1H1T-63 : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.

CC3P1-0011 : 1 % ACCURACY CLASS, CURRENT TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: CURRENT TRANSFORMER ; Mounting: Chassis.

EPC3127-1-LF : SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Input Voltage: 120 to 375 volts ; Output Voltage: 5 volts.

S8AL-TP : 8 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB. s: Package: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 8000 mA.

SI4878DY : 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0048 ohms ; Package Type: SOP-8 ; Number of units in IC: 1.

1SS303-A : 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Anode ; Diode Type: General Purpose ; IF: 100 mA ; RoHS Compliant: RoHS ; Pin Count: 3 ; Number of Diodes: 2.

222285213221 : CAP,CERAMIC,220PF,63VDC,10% -TOL,10% +TOL,NP0 TC CODE,1210 CASE. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition.

0-C     D-L     M-R     S-Z