|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal General Purpose Transistor|
|Datasheet||Download 2SC4367 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
|Some Part number from the same manufacture Renesas|
|2SC4416 Small Signal High Frequency Amplifier Transistor|
|2SC4499 Silicon NPN Triple Diffused|
|2SC4500 Silicon NPN Epitaxial|
|2SC4537 Small Signal High Frequency Amplifier Transistor|
|2SC458 Small Signal General Purpose Transistor|
|2SC4589 Silicon NPN Triple Diffused|
|2SC458LG Small Signal General Purpose Transistor|
|2SC4591 Small Signal High Frequency Amplifier Transistor|
|2SC4647 Small Signal General Purpose Transistor|
1N4448WS-7 : Surface Mount Fast Switching Diode. SURFACE MOUNT FAST SWITCHING DIODE Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance Case: SOD-323, Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Polarity: Cathode Band Leads: Solderable per MIL-STD-202, Method 208 Marking:.
1N6263 : 60V; Schottky Barrier Switching Diode. Guard Ring Construction For Transient Protection.
342GH120-211CTV : . SKiiP 342GH120-211CTV I. Power section Absolute maximum ratings Symbol Conditions IGBT VCES VCC 1) Operating DC link voltage VGES (70) °C Inverse diode IF = -IC (70) °C IFSM = 150 °C, = 10ms; sin I2t (Diode) Diode, = 150 °C, Tj , (Tstg) Visol AC, 1min. Symbol IGBT VCEsat VCEO rCE ICES Conditions SKiiP technology inside low loss IGBTs CAL diode technology.
40N30 : Low Voltage < 600 Volts. Hiperfast(tm) Igbt. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions to 150°C; RGE 1 M Continuous Transient 1 ms VGE 15 V, TVJ = 10 Clamped inductive load, = 25°C G = Gate, C = Collector, E = Emitter, TAB = Collector * Add suffix letter "S" for surface mountable package International standard packages JEDEC TO-247 AD and surface mountable.
5HN01M : . s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage.
BAS20W : Surface Mount Fast Switching Diode.
KIA494APV : Bipolar Linear Integrated Circuit ( General Purpose Switching Regulator ).
S3V60 : General Purpose Rectifiers/ Single (Axial). High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source(Power Supply) Home Appliances, Office Equipment Telecommunication, Factory Automation Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction.
050021R4CCMC : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.0000014 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.40E-6 microF ; Capacitance Tolerance: 18 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style:.
BAS121 : 0.2 A, 250 V, SILICON, SIGNAL DIODE. s: Package: GREEN, PLASTIC PACKAGE-3 ; Number of Diodes: 1 ; IF: 200 mA ; RoHS Compliant: RoHS.
CL32A106KA9LNNE : CAPACITOR, CERAMIC, MULTILAYER, 25 V, X5R, 10 uF, SURFACE MOUNT, 1210. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 10 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface.
NCS3-272+ : 2250 MHz - 2725 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).
SMN0404 : RESISTOR, NETWORK, FILM, ISOLATED, SURFACE MOUNT, 0404. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, LEAD/ROHS COMPLIANT ; Operating DC Voltage: 25 volts ; Operating Temperature: -55 to 150 C (-67 to 302 F).
SST202T1 : N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; PD: 360 milliwatts ; Package Type: PLASTIC PACKAGE-3 ; Number of units in IC: 1.
V1000LS80AP : RESISTOR, VOLTAGE DEPENDENT, 1200 V, 220 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Power Rating: 0.6000 watts (8.04E-4 HP) ; Operating DC Voltage: 1200 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.
2SD1904-Q : 5 A, 50 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: TO-220, TO-220MF, 3 PIN.