|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal High Frequency Amplifier Transistor|
|Datasheet||Download 2SC4463 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
|Some Part number from the same manufacture Renesas|
|2SC4499 Silicon NPN Triple Diffused|
|2SC4500 Silicon NPN Epitaxial|
|2SC4537 Small Signal High Frequency Amplifier Transistor|
|2SC458 Small Signal General Purpose Transistor|
|2SC4589 Silicon NPN Triple Diffused|
|2SC458LG Small Signal General Purpose Transistor|
|2SC4591 Small Signal High Frequency Amplifier Transistor|
|2SC4647 Small Signal General Purpose Transistor|
|2SC4680 Small Signal High Frequency Amplifier Transistor|
|2SC4692 Silicon NPN Triple Diffused|
|2SC4693 Small Signal High Frequency Amplifier Transistor|
|2SC4702 Small Signal General Purpose Transistor|
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2N6426 : Small Signal Darlington NPN , Package: TO-92 (TO-226), Pins=3. Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value to +150 Unit Vdc mAdc Characteristic Thermal Resistance,.
BAT42WandBAT43W : . For general purpose applications These diodes feature very low turn-on voltage and fast switching. These devices are protected a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the DO-35 case with the type designations to BAT43 and in the MiniMELF case with the type designations.
FE : Assemblies. Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts FP175F FP200F Amps 100°C Amps Reverse Current @ Vrwm (Ir) µA 25°C Volts Amps Forward Voltage 1 Cycle Surge Current tp=8.3ms (Ifsm) 25°C Amps Repetitive Surge Current (Ifrm) 25°C Amps Reverse Recovery Time (1) (Trr) 25°C ns in. Case Length (L) Dimensions: In. (mm).
IRF7503 : 30V Dual N-channel HexFET Power MOSFET in a Micro 8 Package. Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching.
SLA4061 : Array. Sink Driver With Built-in Flywheel Diode. Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR PT VISO Tj Tstg j-c Ratings 8 (PW10ms, single) (Tc=25°C) 1000 (Between fin and lead pin, AC) +150 5 Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) ton tstg tf min typ max min typ max Unit With Silicone Grease Natural Cooling Heatsink: Aluminum in mm .
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