|Category||Discrete => Transistors => Bipolar => General Purpose => NPN => Epitaxial|
|Description||Silicon NPN Epitaxial|
|Datasheet||Download 2SC4500 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
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|Related products with the same datasheet|
|Some Part number from the same manufacture Renesas|
|2SC4500L Silicon NPN Epitaxial|
|2SC4537 Small Signal High Frequency Amplifier Transistor|
|2SC458 Small Signal General Purpose Transistor|
|2SC4589 Silicon NPN Triple Diffused|
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|2SC4591 Small Signal High Frequency Amplifier Transistor|
|2SC4647 Small Signal General Purpose Transistor|
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|2SC4692 Silicon NPN Triple Diffused|
|2SC4693 Small Signal High Frequency Amplifier Transistor|
|2SC4702 Small Signal General Purpose Transistor|
|2SC4704 Silicon NPN Epitaxial|
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BD139-T60-K : 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126. s: Polarity: NPN ; Package Type: TO-126, 3 PIN.
DHC-5121-1R0R : 1 ELEMENT, 1.01 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Application: General Purpose, Power Choke ; Inductance Range: 1.01 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.0040 ohms ; Rated DC Current: 11000 milliamps ; Testing Frequency: 100 kHz ; Operating.
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IPW65R099C6 : 650 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 650 volts ; rDS(on): 0.0990 ohms ; Package Type: GREEN, PLASTIC PACKAGE-3 ; Number of units in IC: 1.
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