|
|
Part: 2SC4500L
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: Silicon NPN Epitaxial
Company: Renesas
Datasheet: Download 2SC4500L datasheet File size : 174 kB
Request For quote: Find where to buy 2SC4500L
Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
2SC4500(L)/(S)
Silicon NPN Epitaxial
ADE-208-894 (Z) 1st. Edition September 2000 Application
Low frequency amplifier
Outline
DPAK
4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector
2, 4
1
S Type
3
3
L Type
2SC4500(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Ratings 60 60 7 1 2 0.8 8 150 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 7 -- 2000 -- -- -- -- Typ -- -- -- -- -- -- 100 600 Max -- -- 10 -- 1.5 2.0 -- -- V V ns ns Unit V V µA Test Conditions I C = 1 mA, RBE = I E = 0.1 mA, IC = 0 VCB = 60 V, IE = 0 VCE = 10 V, IC = 500 mA*1 I C = 500 mA, IB = 0.5 mA*1 I C = 500 mA, IB = 0.5 mA*1 VCC = 12 V, IC = 250 mA, I B1 = IB2 = 5 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse Test. V(BR)EBO I CBO hFE VCE (sat) VBE (sat) t on t off
2SC4500(L)/(S)
Maximum Collector Dissipation Curve 12 Collector power dissipation PC (W) 3.0
µs ) 100 5 °C s =2 TC 1m s on( 0 m rati = 1 C Ope D
Area of Safe Operation
Collector current IC (A)
1.0
PW
8
0.3
4
0.1
Ta = 25°C, 1 Shot Pulse 0.03 1.0
0
50 100 Case temperature TC (°C)
150
3 10 30 100 Collector to emitter voltage VCE (V)
Typical Output Characteristics 1.0
200 180 160 140 120 120
DC Current Transfer Ratio vs. Collector Current 100,000 DC current transfer ratio hFE
Collector current IC (A)
0.8 0.6
30,000
100
80 µA
10,000
0.4
0.2 IB = 0, Ta = 25°C 0 1 2 3 4 5 Collector to emitter voltage VCE (V)
3,000 VCE = 10 V Ta = 25°C 1,000 0.01 0.03 0.1 0.3 Collector current IC (A) 1.0
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
|
|
|
