|Category||Discrete => Transistors => Bipolar => General Purpose => TRS for General Switching|
|Title||TRS for General Switching|
|Datasheet||Download 2SC458K datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
|Some Part number from the same manufacture Renesas|
|2SC458LG Small Signal General Purpose Transistor|
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|2SC4647 Small Signal General Purpose Transistor|
|2SC4680 Small Signal High Frequency Amplifier Transistor|
|2SC4692 Silicon NPN Triple Diffused|
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M30620FCT-XXXFP : M16C family->M16C/60 series
M38267EEFS : Single-chip 8-bit CMOS Microcomputer
R5F21194SP : Renesas 16-bit Single-chip MCU R8C Family / R8c/1x Series
M38047FDHHP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series
2SC1345_01 : Silicon NPN Epitaxial
M38500F7H-XXXSP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series
M38856FB-HP : Single-chip 8-bit CMOS Microcomputer
HD6473278F10V : Embedded - Microcontroller Integrated Circuit (ics) - * -; MCU 8BIT 5V 16K ROM OTP 64QFP Specifications: Program Memory Size: - ; RAM Size: - ; Number of I /O: - ; Package / Case: * ; Speed: - ; Oscillator Type: - ; Packaging: * ; Program Memory Type: - ; EEPROM Size: - ; Core Processor: - ; Data Converters: - ; Core Size: - ; Operating Temperature: - ; Connectivity: - ; Peripherals: -
R5F213M6UNXXXNP : IC,MICROCONTROLLER,16-BIT,LLCC,40PIN,PLASTIC Specifications: Life Cycle Stage: ACTIVE
48CTQ060 : 5 to 100 Amp. 60V 40A Schottky Common Cathode Diode in a TO-220AB Package.
BZV8511 : Silicon Planar Power Zener Diodes. Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltage are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request. DIM ENSIONS DIM inches Min. 1.102 Max. 0.110 0.031 Min. 28.0 mm Max. 2.8 0.8 Note Zener current see Table "Characteristics".
MRF151G : 300 W, 50 V, N-channel Broadband RF Power MOSFET. Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Guaranteed Performance at 175 MHz, 50 V: Output Power 300 W Gain (16 dB Typ) Efficiency 50% Low Thermal Resistance.
0805J0500151JXC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.00015 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.50E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style:.
FHT951 : L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: SOT23, SOT-23, 3 PIN ; Number of units in IC: 1 ; Operating Frequency: 8000 MHz.
KTJ : CAPACITOR, CERAMIC, MULTILAYER, 25; 50; 100; 250 V, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).
SRM1150HE : 0.5 A, SILICON, SIGNAL DIODE. s: Package: HERMETIC SEALED, 107, 2 PIN ; Number of Diodes: 1 ; IF: 500 mA.
T95D476K020CAAL : CAPACITOR, TANTALUM, SOLID, POLARIZED, 20 V, 47 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Tantalum ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 47 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 20 volts ; Mounting Style: Surface Mount Technology ; Operating.
242NQ030-1 : 240 A, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: PLASTIC, PRM1-1, HALF PAK-1 ; Number of Diodes: 1 ; IF: 240000 mA.
250WA4.7MCA8X9 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250 V, 4.7 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 250 volts ; Leakage Current: 147 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).
53MT100K : 1000 V, SCR. s: VDRM: 1000 volts ; VRRM: 1000 volts ; IGT: 60 mA ; Pin Count: 12.
680NS14D : RESISTOR, VOLTAGE DEPENDENT, 550 V, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole ; Operating DC Voltage: 550 volts.
820542711 : RESISTOR, VOLTAGE DEPENDENT, 350 V, 132 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Power Rating: 0.6000 watts (8.04E-4 HP) ; Operating DC Voltage: 350 volts ; Operating Temperature: -40 to 125 C (-40 to 257 F).