|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal High Frequency Amplifier Transistor|
|Datasheet||Download 2SC4591 datasheet
|Cross ref.||Similar parts: BFR193|
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
|Some Part number from the same manufacture Renesas|
|2SC4592 Small Signal High Frequency Amplifier Transistor|
|2SC4647 Small Signal General Purpose Transistor|
|2SC4680 Small Signal High Frequency Amplifier Transistor|
|2SC4692 Silicon NPN Triple Diffused|
|2SC4693 Small Signal High Frequency Amplifier Transistor|
|2SC4702 Small Signal General Purpose Transistor|
|2SC4704 Silicon NPN Epitaxial|
|2SC4742 NPN Transistor For Character Display Horizontal Deflection Output Application, 1500V, 6A|
|2SC4743 Silicon NPN Triple Diffused|
|2SC4747 NPN Transistor For Character Display Horizontal Deflection Output|
|2SC4784 Small Signal High Frequency Amplifier Transistor|
|2SC4789 Silicon NPN Triple Diffused|
HD64F3064 : H8 family->H8/300H
M38067M9DFP : Temporary Target Board
HN58X2508FPIAG : Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
R1Q5A3636RBG-40RT0 : 36-mbit Qdr˘âii SRAM 2-word Burst
R5F103AAASP#V0 : Embedded - Microcontroller Integrated Circuit (ics); MCU RL78G12 16KB FLASH 30-SSOP Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
MFW-S13E : Adapter Programmers, Development System; SUNNY GIKEN PROG ADPT Specifications: For Use With/Related Products: Sunny Giken Programmer ; Module/Board Type: Adapter Board ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant
HD64F2238BFA13V : 16-BIT, FLASH, 13.5 MHz, MICROCONTROLLER, PQFP100 Specifications: Data Bus: 16 Bit ; Life Cycle Stage: ACTIVE ; Clock Speed: 13.5 MHz ; ROM Type: Flash ; Supply Voltage: 3 to 5.5 volts ; I/O Ports: 82 ; Package Type: QFP, Other, 14 X 14 MM, 0.50 MM PITCH, PLASTIC, QFP-100 ; Operating Range: Commercial ; Pin Count: 100 ; Operating Temperature: -20 t
UPA808T-T1KB-A : 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR Specifications: Polarity: NPN ; Package Type: PLASTIC, SUPERMINI-6 ; Number of units in IC: 2 ; Operating Frequency: 11000 MHz
UPD44324364F5-E37-EQ2-A : 2M X 18 ZBT SRAM, 6.5 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 37749 kbits ; Number of Words: 2000 k ; Bits per Word: 18 bits ; Package Type: 15 X 17 MM, PLASTIC, FBGA-165 ; Pins: 165 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 6.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)
4AK20 : Arrays. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
IXFH67N10 : HiperFET Power MOSFET N-channel Enhancement Mode High Dv/dt, Low T RR , Hdmos (tm) Family (tm): 100v, 67a.
kv1405 : Variable Capacitance Diode. Excellent Linearity (CV Curve) Large Capacitance Ratio = 2.10 minimum) Two Diodes in a Miniature Package (SOT23-3) Very Small Capacitance Deviation at Tape/Reel APPLICATIONS The an 8 volt range variable capacitance diode designed for AM tuner applications. It contains two elements housed in the miniature SOT23-3 surface mount package. Reverse Voltage..
NDS0605 : Enhancement P-Channel. P-channel Enhancement Mode Field Effect Transistor.
SBL2030PT : 5 to 100 Amp. Schottky Rectifier. Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free-wheeling, and polarity.
SML901R1AN : N-channel Enhancement Mode High Voltage Power MOSFETs. NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter VDSS ID IDM VGS TJ , TSTJ Drain Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 901R1AN.
NTD4810NH : ower MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK. Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices Applications Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note.
03029BR271AJZC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00027 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 2.70E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
0603B821J100CG : CAPACITOR, CERAMIC, MULTILAYER, 10 V, X7R, 0.00082 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 8.20E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 10 volts ; Mounting Style:.
CST1-020LB : 10 A CURRENT SENSE TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Current-Sense ; Mounting: Chip Transformer ; Operating Frequency: 50000 to 1.00E6 Hz ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Standards: RoHS.
CTSLF0755TF-100M : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.0391 ohms ; Testing Frequency: 100 kHz ; Operating Temperature:.
HACW-2 : RESISTOR, CARBON FILM, 0.25 W, 5; 10; 20 %, 2000; 2800 ppm, 10000000000 ohm - 1000000000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: CarbonFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 1500 volts ; Operating Temperature: 40 C (104 F).
IRFP32N50KS : 32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.1600 ohms ; Package Type: SMD-247, 3 PIN ; Number of units in IC: 1.
KTK596B : SMALL SIGNAL, FET.
400MACA105JB : CAPACITOR, METALLIZED FILM, POLYESTER, 1 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; Capacitance Range: 1 microF ; Capacitance Tolerance: 5 (+/- %) ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -25 to 60 C (-13 to 140 F).
683MSS100K : CAPACITOR, METALLIZED FILM, POLYESTER, 100 V, 0.068 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; RoHS Compliant: Yes ; Capacitance Range: 0.0680 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style:.
933859230215 : 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 215 mA ; RoHS Compliant: RoHS ; Package: PLASTIC, SMD, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.