|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal High Frequency Amplifier Transistor|
|Datasheet||Download 2SC4592 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.Application
|Some Part number from the same manufacture Renesas|
|2SC4593 Small Signal High Frequency Amplifier Transistor|
|2SC4647 Small Signal General Purpose Transistor|
|2SC4680 Small Signal High Frequency Amplifier Transistor|
|2SC4692 Silicon NPN Triple Diffused|
|2SC4693 Small Signal High Frequency Amplifier Transistor|
|2SC4702 Small Signal General Purpose Transistor|
|2SC4704 Silicon NPN Epitaxial|
|2SC4742 NPN Transistor For Character Display Horizontal Deflection Output Application, 1500V, 6A|
|2SC4743 Silicon NPN Triple Diffused|
|2SC4747 NPN Transistor For Character Display Horizontal Deflection Output|
|2SC4784 Small Signal High Frequency Amplifier Transistor|
|2SC4789 Silicon NPN Triple Diffused|
|2SC4791 Small Signal High Frequency Amplifier Transistor|
M38025M6-XXXSS : 8-bit Single-chip Microcomputer 740 Family / 38000 Series
HN58X2432FPIE : Two-wire Serial Interface 8k Eeprom (1-kword ¡¿ 8-bit)/16k Eeprom (2-kword ¡¿ 8-bit) 32k Eeprom (4-kword ¡¿ 8-bit)/64k Eeprom (8-kword ¡¿ 8-bit)
M38502M6H-XXXFP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series
M30291FAVHP : Renesas MCU M16C Family / M16c/tiny Series
M38506F3H-XXXFP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series
UPD78F0463GK-GAJ-AX : Embedded - Microcontroller Integrated Circuit (ics) Internal Tray 1.8 V ~ 5.5 V; MCU 8BIT 32K FLASH 64PIN Specifications: Program Memory Size: 32KB (32K x 8) ; RAM Size: 1K x 8 ; Number of I /O: 46 ; Package / Case: 64-LQFP ; Speed: 10MHz ; Oscillator Type: Internal ; Packaging: Tray ; Program Memory Type: FLASH ; EEPROM Size: - ; Core Processor: 78K/0 ; Data Converters: A/D 8x10b, 3x16b ; Core Size: 8-
M30291FCHP#U3A : Embedded - Microcontroller Integrated Circuit (ics) Internal Tray 2.7 V ~ 5.5 V; IC M16C/29 MCU FLASH 128K 64LQFP Specifications: Program Memory Size: 128KB (128K x 8) ; RAM Size: 12K x 8 ; Number of I /O: 55 ; Package / Case: 64-LQFP ; Speed: 20MHz ; Oscillator Type: Internal ; Packaging: Tray ; Program Memory Type: FLASH ; EEPROM Size: - ; Core Processor: M16C/60 ; Data Converters: A/D 16x10b ; Core Size: 16/
HA17358AF : DUAL OP-AMP, 7000 uV OFFSET-MAX, PDIP8 Specifications: Supply Voltage (VS): 15 volts ; IBIAS: 0.2500 ÂµA ; CMRR: 80 dB ; Slew Rate: 0.2000 V/Âµs ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Package Type: DIP, 6.30 X 9.60 MM, 2.54 MM PITCH, PLASTIC, DIP-8 ; Number of Pins: 8 ; Number of Devices: 2 ; Standards: RoHS
2N3879SMD : Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 75V ;; IC(cont) = 7A ;; HFE(min) = 12 ;; HFE(max) = 100 ;; @ Vce/ic = 2V / 4A ;; FT = 40MHz ;; PD = 35W.
BPW14N : Silicon NPN Phototransistor. is a high speed silicon NPN epitaxial planar phototransistor in a standard TO18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±12° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control. Hermetically sealed case Lens window Narrow viewing angle ± 10° Exact central.
BT134W-500 : BT134W Series D; Triacs Logic Level. Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. SYMBOL VDRM IT(RMS) ITSM.
MGB15N35CLT4 : Ignition Igbt 15 Amps, 350 Volts, Package: D2PAK, Pins=3. This Logic Level Insulated Gate Bipolar Transistor (IGBT) monolithic circuitry integrating ESD and OverVoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Ideal for CoilOnPlug, IGBTOnCoil, or Distributorless.
SB805 : Pakage = SB-10 ;; Max. Reverse Voltage VRM (V)= 600 ;; Max. Aver. Rect. Current io (A)= 8 ;; Ifsm (A)= 250.
ZXMS6005DG : MOSFETs IntelliFET The ZXMS6005DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged.
03028-BX472ZJZ-J : CAPACITOR, CERAMIC, MULTILAYER, 25 V, BX, 0.0047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0047 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.
05002100BMMP : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.00001 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface.
BCR3AS-12A-T13 : TRIAC. s: Thyristor Type: Triac. IT(RMS) 3 A VDRM 600 V IFGT I, IRGT I, IRGT III : 15 mA Non-Insulated Type Planar Passivation Type RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) T1 Terminal T2 Terminal Gate Terminal T2 Terminal Applications Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment.
GI820-E3 : 5 A, 50 V, SILICON, RECTIFIER DIODE. s: Package: LEAD FREE, PLASTIC, CASE P600, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 5000 mA ; trr: 0.2000 ns ; RoHS Compliant: RoHS.
IPI80P03P4-05 : 80 A, 30 V, 0.005 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0050 ohms ; Package Type: GREEN, PLASTIC, TO-262, 3 PIN ; Number of units in IC: 1.
LA12-20V21 : 20 A CURRENT SENSE TRANSFORMER. s: Transformer Type: Current-Sense ; Secondary Current Rating: 20 amps ; Operating Temperature: -10 to 75 C (14 to 167 F) ; Standards: RoHS.
LR25 : RESISTOR, METAL FILM, 0.25 W, 1 %, 100 ppm, 1 ohm - 10000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 250 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F).
MBRS4060CT : 20 A, 60 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 20000 mA ; Package: D2PAK, GREEN, PLASTIC, D2PAK-3 ; Pin Count: 2 ; Number of Diodes: 2.
PFE5K5R40 : RESISTOR, WIRE WOUND, 10 %, 500 ppm, 5.4 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 5.4 ohms ; Tolerance: 10 +/- % ; Temperature Coefficient: 500 Â±ppm/Â°C ; Standards and Certifications: RoHS.
1N87ABK : 0.05 A, 23 V, GERMANIUM, SIGNAL DIODE, DO-7. s: Number of Diodes: 1 ; IF: 50 mA.
2SC5200-R : 15 A, 230 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: ROHS COMPLIANT, 2-21F1A, 3 PIN.
2SK241TPE4 : VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Depletion ; V(BR)DSS: 20 volts ; PD: 200 milliwatts ; Number of units in IC: 1.