|Category||Discrete => Transistors => Bipolar => General Purpose => NPN|
|Description||Small Signal General Purpose Transistor|
|Datasheet||Download 2SC4647 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.Application
High break down voltage V(BR)CEO 300 V min.
|Some Part number from the same manufacture Renesas|
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|2SC4693 Small Signal High Frequency Amplifier Transistor|
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|2SC4742 NPN Transistor For Character Display Horizontal Deflection Output Application, 1500V, 6A|
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|2SC4784 Small Signal High Frequency Amplifier Transistor|
|2SC4789 Silicon NPN Triple Diffused|
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|2SC4807 Small Signal High Frequency Amplifier Transistor|
|2SC4828 Silicon NPN Triple Diffused|
|2SC4829 Small Signal General Purpose Transistor|
|2SC4877 Silicon NPN Triple Diffused|
M38509MBA-XXXFP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series
H8S2609 : 16-bit Single-chip Microcomputer H8S Family/h8s/2600 Series
M16C1N : Renesas 16-bit Single-chip Microcomputer M16C Family / M16c/10 Series
HZ15-1TAX : 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Specifications: Diode Type: VOLTAGE REGULATOR DIODE
HZS12B3LTDX : 13.15 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 Specifications: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS
UPD43256BCZ-55L : 32K X 8 STANDARD SRAM, 55 ns, PDIP28 Specifications: Memory Category: SRAM Chip ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: DIP, PLASTIC, DIP-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 55 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)
UPD70F3728GC-8BT-A : 32-BIT, FLASH, 48 MHz, RISC MICROCONTROLLER, PQFP144 Specifications: Data Bus: 16 Bit ; Life Cycle Stage: ACTIVE ; Clock Speed: 48 MHz ; ROM Type: Flash ; Supply Voltage: 2.85 to 3.6 volts ; I/O Ports: 128 ; Package Type: LFQP, Other, 20 X 20 MM, LEAD FREE, PLASTIC, LQFP-144 ; Operating Range: Industrial ; Pin Count: 144 ; Operating Temperature: -40 t
UPD78F9234MC(A)-5A4-A : 8-BIT, FLASH, 5 MHz, MICROCONTROLLER, PQFP44 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 5 MHz ; ROM Type: Flash ; Supply Voltage: 1.8 to 5.5 volts ; I/O Ports: 34 ; Package Type: LFQP, Other, 10 X 10 MM, PLASTIC, LQFP-44 ; Operating Range: Industrial ; Pin Count: 44 ; Operating Temperature: -40 to 85 C (-40 to 185 F)
2SC1841E : 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Specifications: Polarity: NPN ; Package Type: SC-43B, 3 PIN
MJE521 : Power 4A 40V NPN Silicon , Package: TO-225, Pins=3. . designed for use in generalpurpose amplifier and switching circuits. Recommended for use to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS Rating Symbol VCEO VCB VEB IC IB Value 40 Unit Vdc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 2 1 Collector.
PLA143 : Single Pole Optomos Relay. Small 6 Pin DIP Package Low Drive Power Requirements (TTL/CMOS Compatible) No Moving Parts High Reliability Arc-Free With No Snubbing Circuits 4000VRMS Input/Output Isolation FCC Compatible VDE Compatible No EMI/RFI Generation Machine Insertable, Wave Solderable 600 volt blocking The a 1-Form-A solid state relay which uses optically coupled MOSFET technology.
SR1650 : Pakage = TO-220 ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 16 ;; Ifsm (A)= 200.
05002390BGZP : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 3.90E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface Mount Technology.
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A700D187M002AT : CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 2 V, 180 uF, SURFACE MOUNT, 2916. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 180 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2 volts ; Leakage Current: 21.6 microamps ; ESR: 18 milliohms ; Mounting Style: Surface Mount Technology.
BUK7E4R3-75C : 100 A, 75 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 75 volts ; rDS(on): 0.0043 ohms ; Package Type: PLASTIC, TO-262, I2PAK-3 ; Number of units in IC: 1.
DZ24200 : 20 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.
ECL06B03-FTE16F2 : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.
PSMN022-30BL : POWER, FET. Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources DC-to-DC converters Load switiching Motor control Server power supplies.
SIOV-CU3225K130G2 : RESISTOR, VOLTAGE DEPENDENT, 170 V, 4.2 J, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, 3225 ; Power Rating: 0.1000 watts (1.34E-4 HP) ; Operating DC Voltage: 170 volts ; Operating Temperature: -40 to 85 C (-40 to 185 F).
TIM40R : PULSE TRANSFORMER FOR SIGNAL SYNCHRONISATION APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers ; Mounting: Chip Transformer ; Operating Temperature: -30 to 75 C (-22 to 167 F).
TPC6011 : 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0320 ohms ; Package Type: ROHS COMPLIANT, 2-3T1A, 6 PIN ; Number of units in IC: 1.