|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs|
|Description||Power Switching MOSFET|
|Datasheet||Download 2SJ471 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.Silicon P Channel DVL MOS FET High Speed Power Switching
Low on-resistance R DS(on) 25 m typ. 4V gate drive devices. High speed switching
|Some Part number from the same manufacture Renesas|
|2SJ483 Power Switching MOSFET|
|2SJ517 Power Switching MOSFET|
|2SJ529 Silicon P Channel MOS Fet High Speed Power Switching: -60v, -10a|
|2SJ531 Power Switching MOSFET|
1Z51 : Diode ( Constant Voltage Regulation ).
DSB02A20 : 0.2 And 0.5 Amp Schottky Barrier Rectifiers. 0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION Operating Temperature: to +125°C Storage Temperature: to +150°C Average Rectified Forward Current: 0.2 AMP @TL +100°C, =3/8" Derating: / °C above = 3/8" ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. CDI TYPE NUMBER WORKING.
JANHCE1N5807 : Ultra Fast Rectifier (less Than 100ns), Package : Die. 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 Chip Outline Dimensions: x 68 mils Chip Thickness: to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated with Thermal Silicon Dioxide.
KSA1943 : PNP Epitaxial Silicon Transistor. High Current Capability = -13A High Power Dissipation Wide S.O.A Complement to KSC5200 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature.
PR1003 : 1.0A Fast Recovery Rectifier. Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0 Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Type.
FT0803BH00TU : 200 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB. s: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Package Type: TO-220, TO-220AB, 3 PIN ; Pin Count: 3 ; VDRM: 200 volts ; IT(RMS): 8 amps ; Standards and Certifications: RoHS.
HQ1L2Q : 2 A, 20 V, PNP, Si, POWER TRANSISTOR. s: Polarity: PNP ; Package Type: POWER, PLASTIC, SC-62, 3 PIN.
RS5T103D : 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Application: General Purpose ; Inductance Range: 1 microH ; Operating Temperature: -20 to 120 C (-4 to 248 F).
T4067NL : DATACOM TRANSFORMER FOR ISDN APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.
1N3595BK : 0.15 A, 150 V, SILICON, SIGNAL DIODE, DO-35. s: Number of Diodes: 1 ; IF: 150 mA.
250R11B103ZP4 : CAP,CERAMIC,10NF,25VDC,.5PF -TOL,.5PF +TOL,20% -TOL,80% +TOL,BX TC CODE,-15,15% TC,-30,30PPM TC,0504 CASE. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition.
2N5551TRA : 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: NPN.
350KXF100MEFCSN25X20 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 100 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 350 volts ; Leakage Current: 561 microamps ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13 to 221 F).
7020-01037-0 : 75:5 A, 2 % ACCURACY CLASS, CURRENT TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: CURRENT TRANSFORMER ; Mounting: Chip Transformer ; Standards: RoHS.