|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel|
|Description||Power Switching MOSFET|
|Datasheet||Download 2SK1340 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
|Some Part number from the same manufacture Renesas|
|2SK1341 Power Switching MOSFET|
|2SK135 Silicon N-channel MOSFET Low Frequency Power Amplifier (-160V Drain-source Breakdown Voltage)|
|2SK1400 Power Switching MOSFET|
|2SK1528 Silicon N-channel MOS Fet: 900v, 4a|
|2SK1540 Silicon N-channel MOS Fet: 450v, 7a|
|2SK1541 Silicon N-channel MOS Fet: 500v, 7a|
|2SK1541L Power Switching MOSFET|
2SA778K : TRS for General Switching
HAT2042T : Silicon N Channel Power MOS Fet High Speed Power Switching
HD6477042 : Others Series
M38125M7-XXXFP : Single-chip 8-bit CMOS Microcomputer
H7N1004FM : Silicon N-channel Mosfet High-speed Power Switching
HD6473937RXV : Embedded - Microcontroller Integrated Circuit (ics) Internal Tray 1.8 V ~ 3.6 V; MCU 3/5V 60K 100-TQFP Specifications: Program Memory Size: 60KB (60K x 8) ; RAM Size: 2K x 8 ; Number of I /O: 59 ; Package / Case: 100-TQFP ; Speed: 10MHz ; Oscillator Type: Internal ; Packaging: Tray ; Program Memory Type: OTP ; EEPROM Size: - ; Core Processor: H8/300L ; Data Converters: A/D 8x10b ; Core Size: 8-Bit ;
2SK3943-ZP-E1-AY : Fet - Single Discrete Semiconductor Product 82A 40V 1.5W Surface Mount; MOSFET N-CH 40V MP-25ZP/TO-263 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 40V ; Current - Continuous Drain (Id) @ 25° C: 82A ; Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 41A, 10V ; Input Capacitance (Ciss) @ Vds: 5800pF @ 10V ; Power - Max: 1.5W ; Packaging: Ta
HD64F3684GH : 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 20 MHz ; ROM Type: Flash ; Supply Voltage: 4 to 5.5 volts ; I/O Ports: 53 ; Package Type: LFQP, Other, 10 X 10 MM, 0.50 MM PITCH, LQFP-64 ; Operating Range: Commercial ; Pin Count: 64 ; Operating Temperature: -20 to 75 C (-4 to 167 F) ; Feature
1SMB58CA : Zener Transient Voltage Suppressors. Watt Peak Power Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor's exclusive, cost-effective, highly.
2N-PN4037 : Complementary Silicon Transistors.
2PD602A : Complementary N/P FET. 2PD602A; NPN General Purpose Transistor. High current (max. 500 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification. NPN transistor an SC-59 plastic package. PNP complement: 2PB710A. MARKING TYPE NUMBER 2PD602AR 2PD602AS MARKING CODE XR XS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot.
FEP16HTD : 16A Ultra Fast Recovery Rectifier. Low forward voltage drop. High surge current capacity. High current capability. High reliability. Maximum Repetitive Reverse Voltage Average Rectified Forward Current,.375 " lead length = 100°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature *These ratings are limiting values.
H8770 : PMT Modules. APPLICATIONS HAMAMATSU has introduced new Electron Detection Unit H8770, consist of newly developed extremely fast decay phosphor and high sensitivity compact PMT. Decay time of the phosphor is faster than 1ns, and it can present high speed electron detection. Built-in PMT power supply, high speed amplifier and other circuitry provide its easy operation.
PH1214-3L : 1200-1400 MHz,3W, 2 MS Pulse,radar Pulsed Power Transistor. Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty - 1.4 GHz PH=l214=3L NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic ~MetaUCeramic Package s .
IXTV26N50P : Polar N-channel MOSFETs International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect.
BTA312 : Passivated, new generation, high commutation triacs in a SOT78 plastic package.
APT20DC60HJ : ISOTOP® SiC Diode Full Bridge Power Module ISOTOP® SiC Diode e Full Bridge Power Module e.
0805F0160224KBT : CAPACITOR, CERAMIC, MULTILAYER, 16 V, BX, 0.22 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.2200 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 16 volts ; Mounting Style:.
FF400R07KE4 : 485 A, 650 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: MODULE-7 ; Number of units in IC: 2.
FKP4G041006J00JSSD : CAPACITOR, FILM/FOIL, POLYPROPYLENE, 400 V, 1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 1 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 400 volts ; Mounting Style: Through Hole ; Operating Temperature:.
H2745-7 : 0.14 A, SILICON, SIGNAL DIODE. s: Package: PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 140 mA.
MTF04 : RESISTOR, METAL FILM, 0.4 W, 0.25; 0.5; 1; 2; 5 %, 15; 25; 50; 100; 200 ppm, 1 ohm - 1000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Operating DC Voltage: 200 volts ; Operating Temperature: -55 to 155 C (-67.
SH8M24TB : 4.5 A, 45 V, 0.064 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 45 volts ; rDS(on): 0.0640 ohms ; Package Type: SOP-8 ; Number of units in IC: 2.
SS20L : 1 A, 20 V, SILICON, SIGNAL DIODE. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.
2N2857XCSM : UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: SOT23, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3 ; Number of units in IC: 1.
3R3K50V4X7 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 3.3 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 3.3 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Leakage Current: 0.3300 microamps ; ESR: 50300 milliohms ; Mounting Style: Through Hole ; Operating Temperature:.
635MABA01KGC : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 775 V, 6.3 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 6.3 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 775 volts ; Mounting Style:.