|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel|
|Description||Power Switching MOSFET|
|Datasheet||Download 2SK1342 datasheet
|Cross ref.||Similar parts: STW7NK90Z, STW9NK90Z|
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
|Some Part number from the same manufacture Renesas|
|2SK135 Silicon N-channel MOSFET Low Frequency Power Amplifier (-160V Drain-source Breakdown Voltage)|
|2SK1400 Power Switching MOSFET|
|2SK1528 Silicon N-channel MOS Fet: 900v, 4a|
|2SK1540 Silicon N-channel MOS Fet: 450v, 7a|
|2SK1541 Silicon N-channel MOS Fet: 500v, 7a|
|2SK1541L Power Switching MOSFET|
R5F21254SNFP : Single-Chip 16-bit CMOS Microcontroller This MCU is built using the high-performance silicon gate CMOS process using the R8C/Tiny Series CPU core and is packaged in a 48-pin plastic molded LQFP. This MCU operates using sophisticated instructions featuring a high level of instruction efficiency. W
HN58X24256ASFPI : Two-wire Serial Interface 8k Eeprom (1-kword ¡¿ 8-bit)/16k Eeprom (2-kword ¡¿ 8-bit) 32k Eeprom (4-kword ¡¿ 8-bit)/64k Eeprom (8-kword ¡¿ 8-bit)
M37471E8-XXXFP : 8-bit Single-chip Microcomputer 740 Family / 7470 Series
M38503E2-XXXFP : Single-chip 8-bit CMOS Microcomputer
R5F21244SDXXXLG : Single-chip 16-bit CMOS MCU
HITK0204MPTL-HQ : SMALL SIGNAL, FET
R5F562N7ADBG#U0 : 32-BIT, FLASH, 100 MHz, MICROCONTROLLER, PBGA176 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 14 MHz ; ROM Type: Flash ; Supply Voltage: 2.7 to 3.6 volts ; I/O Ports: 123 ; Package Type: Other, 13 X 13 MM, 0.80 MM PITCH, LFBGA-176 ; Operating Range: Industrial ; Pin Count: 176 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Featur
RD24PB-T1-AZ : ZENER DIODE,SINGLE, TWO TERMINAL,24V V(Z),5%,SOT-89 Specifications: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS
2SJ214(S) : 10 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.2500 ohms ; Package Type: LDPAK-3 ; Number of units in IC: 1
2N6298 : Screening Options Available = ;; Polarity = PNP ;; Package = TO66 (TO213AA) ;; Vceo = 60V ;; IC(cont) = 8A ;; HFE(min) = 750 ;; HFE(max) = 18000 ;; @ Vce/ic = 3V / 4A ;; FT = 4MHz ;; PD = 75W.
2SC2922 : . Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=10V, f=1MHz .
ASI10571 : NPN Silicon RF Power Transistor.
IRL520 : Power MOSFET To-220ab.
SPP47N10 : Sipmos Power Transistor: 100v, 47a. Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated Maximum Ratings,at = 25 °C, unless otherwise specified Parameter Continuous drain current Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal.
UPS130 : 1 Amp Schottky Rectifier 20 to 40 Volts. High Power Surface Mount Package Guard Ring Protection Low Forward Voltage Integral Heat Sink/Locking Tabs Compatible with Automatic Insertion Equipment Operating Temperature: to +150°C Storage Temperature: to +150°C Maximum Thermal Resistance; 23°C/W Junction To Tab Maximum Thermal Resistance; 10°C/W Junction To Bottom MCC Device Maximum Catalog Marking.
03028BX332AMU : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.0033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0033 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
05002-360CMMP : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000036 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.60E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style:.
BLF7G22L-100P : 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: ROHS COMPLIANT, CERAMIC PACKAGE-4 ; Number of units in IC: 2.
PVM302N12 : 3 kV, SILICON, VOLTAGE MULTIPLIER DIODE. s: Diode Type: VOLTAGE MULTIPLIER DIODE ; Pin Count: 4 ; Number of Diodes: 12.
Q5004D3 : 500 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252AA. s: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Package Type: DPAK, DPAK-3 ; Pin Count: 2 ; VDRM: 500 volts ; IT(RMS): 4 amps ; Standards and Certifications: RoHS.
SDA276H : 0.36 A, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 2500 mA ; Pin Count: 4 ; Number of Diodes: 4.
SP8K31TB : 3.5 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.1500 ohms ; Package Type: SOP-8 ; Number of units in IC: 2.
SQZ15AJBI1.1R : RESISTOR, WIRE WOUND, 15 W, 5 %, 300 ppm, 1.1 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Resistance Range: 1.1 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 Â±ppm/Â°C ; Power Rating: 15 watts (0.0201 HP) ; Operating.
T2105S : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.
11DQ03-G : 1.1 A, SILICON, RECTIFIER DIODE, DO-204AL. s: Rectifier Configuration / Technology: Schottky ; Package: DO-41, GREEN, PLASTIC, DO-41, 2 PIN ; Number of Diodes: 1 ; IF: 1100 mA ; RoHS Compliant: RoHS.
12062C : CAPACITOR, CERAMIC, MULTILAYER, 200 V, SURFACE MOUNT, 1206. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).
682PSB302K2G : CAPACITOR, FILM/FOIL, POLYPROPYLENE, 3000 V, 0.0068 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.0068 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 3000 volts ; Mounting.