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Part: 2SK3419
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> for General Switching
Description:
Company: Renesas
Datasheet: Download 2SK3419 datasheet File size : 111 kB
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Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
2SK3419
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-942 (Z) 1st. Edition Mar. 2001 Features
· Low on-resistance R DS(on) = 4.3 m typ. · 4 V gate drive device · High speed switching
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SK3419
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID
Note 1 (pulse)
Value 60 ±20 90 360 90
Unit V V A A A A mJ W °C °C
I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2
65 362 150 150 55 to +150
Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C: Rg 50
2
2SK3419
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero Gate voltage drain drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test Symbol Min V(BR)DSS I DSS I GSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr 60 -- -- 1.0 55 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 90 4.3 6.0 9770 1340 470 180 32 36 53 320 700 380 1.0 75 Max -- 10 ±0.1 2.5 -- 5.5 9.0 -- -- -- -- -- -- -- -- -- -- -- -- Unit V µA µA V S m m pF pF pF nc nc nc ns ns ns ns V ns I F = 90 A, VGS = 0 I F = 90 A, VGS = 0 diF/dt = 50 A/µs Test conditions I D = 10 mA, VGS = 0 VDS = 60 V, VGS = 0 VGS = ±20 V, V DS = 0 VDS = 10 V, ID = 1 mA
Note 1
I D = 45 A, VDS = 10 V Note 1 I D = 45 A, VGS = 10 V Note 1 I D = 45 A, VGS = 4 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V I D = 90 A VGS = 10 V I D = 45 A RL = 0.67
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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