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Part: CR5AS-12
Category:
Discrete
-> Thyristors
Description:
Company: Renesas
Datasheet: Download CR5AS-12 datasheet File size : 71 kB
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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR5AS
OUTLINE DRAWING
Dimensions in mm
6.5
4
TYPE NAME VOLTAGE CLASS
5.5±0.2
1.5±0.2
5.0±0.2
0.5±0.1
0.9 MAX
1.0 2.3
2.3 MIN
1.0 MAX
10 MAX
0.5±0.2 0.8
case temperature
2.3
2.3
Measurement point of
1 2 3
24 2 1 CATHODE 3 ANODE 4 GATE ANODE
· IT (AV) ......... 5A · VDRM ..... 400V/600V · IGT ....... 200µ A
3 1
MP-3
APPLICATION Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for autocycle, electric tools, other general purpose control applications, strobe flasher
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
V1 V1
Voltage class 8 400 500 320 400 320 12 600 720 480 600 480
Unit V V V V V
Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg --
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180° conduction, Tc=88°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 7.8 5 90 33 0.5 0.1 6 6 0.3 40 ~ +125 40 ~ +125
Unit A A A A2s W W V V A °C °C g
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value
0.26
V1. With Gate-to-cathode resistance RGK=220
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VGD I GT IH R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, VRRM applied, RGK=220 Tj=125°C, VDRM applied, RGK=220 Tc=25 °C, ITM=15A, instantaneous value Tj=25 °C, VD=6V, IT=0.1A Tj=125°C, VD=1/2VDRM, RGK=220 Tj=25 °C, VD=6V, IT=0.1A Tj=25 °C, VD=12V, RGK=220 Junction to case V2 Limits Min. -- -- -- -- 0.1 1 -- -- Typ. -- -- -- -- -- -- 3.5 -- Max. 2.0 2.0 1.8 0.8 -- 200 V 3 -- 3.0 Unit mA mA V V V µA mA °C/W
V2. The method point for case temperature is at anode tab. V3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BD) Item IGT (µA) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 D 80 ~ 200
The above values do not include the current flowing through the 220 resistance between the gate and cathode.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 102 7 Tc = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 101 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 100
SURGE ON-STATE CURRENT (A)
90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS 102
7 5 3 2
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
101
7 5 3 2
VFGM = 6V
PGM = 0.5W
GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C)
103 7 5 3 2 102 7 5 3 2
#1
TYPICAL EXAMPLE IGT (25°C) #2 # 1 @11µA # 2 @61µA
100
7 5 3 2
PG(AV) = 0.1W VGT = 0.8V IGT = 200µA (Tj = 25°C)
IFGM = 0.3A
101
7 5
VGD = 0.1V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 GATE CURRENT (mA)
101 7 5 3 VD = 6V 2 RL = 60 100 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 Tj = 25°C
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE (V)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
DISTRIBUTION TYPICAL EXAMPLE JUNCTION TEMPERATURE (°C)
TRANSIENT THERMAL IMPEDANCE (°C/W)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 2 JUNCTION TO CASE 100 103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 TIME (s)
0 60 40 20 0 20 40 60 80 100 120 140
AVERAGE POWER DISSIPATION (W)
CASE TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 16 180° 14 120° 90° 12 60° 10 8 6 4 2 0 0 1 = 30° 360° RESISTIVE, INDUCTIVE LOADS 2 3 4 5 6 7 8
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 = 30° 60° 1 2 3 90° 180° 120° 4 5 6 7 8 360° RESISTIVE, INDUCTIVE LOADS
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (°C) 140 120 100 80 60 AMBIENT TEMPERATURE (°C) 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION WITHOUT FIN
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 = 30° 60° 90° 20 120° 180° 0 0 1 2 40 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD 80 80 t2.3
= 30° 40 60° 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A)
3
4
5
6
7
8
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 16 CASE TEMPERATURE (°C) 14 12 120°
360°
180°
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 RESISTIVE LOADS 140 120 100 80 60 40 20 0 0 1 = 30° 60° 90° 120° 180° 360°
RESISTIVE = 30° 60° 90° 10 LOADS 8 6 4 2 0 0 1 2 3 4 5
6
7
8
2
3
4
5
6
7
8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
120 100 80 60 = 30° 60° 40 90° 120° 20 180° 0 0
360° RESISTIVE LOADS NATURAL CONVECTION
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 WITHOUT FIN 140
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 ALUMINUM BOARD 140 80 80 t2.3 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 360° RESISTIVE = 30° LOADS 60° NATURAL 90° CONVECTION 120° 180°
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
Others parts begin by cr
CR-1 CR-2 CR-3 CR-4
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