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Details, datasheet, quote on part number:FS10VS-6
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| Part: | FS10VS-6 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => for General Switching |
| Description: | |
| Company: | Renesas |
| Datasheet: | Download FS10VS-6 datasheet File size : 82 kB |
| Request For quote: | Find where to buy FS10VS-6
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Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS10VS-6
HIGH-SPEED SWITCHING USE
FS10VS-6
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 0.5
+0.3
0
+0.3 0
1 5 0.8 0.5
qwe wr
2.6 ± 0.4
q
¡VDSS ........ 300V ¡rDS (ON) (MAX) ..... 0.68 ¡ID ......... 10A
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 300 ±3 0 10 30 90 55 ~ +150
4.5
Unit V V A A W °C °C g
Feb.1999
Typical value
55 ~ +150 1.2
(1 .5 )
MITSUBISHI Nch POWER MOSFET
FS10VS-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 300 ±3 0 -- -- 2 -- -- 4.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.52 2.6 6.0 570 110 20 17 25 60 30 1.5 -- Max. -- -- ±1 0 1 4 0.68 3.4 -- -- -- -- -- -- -- -- 2.0 1.39
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 MAXIMUM SAFE OPERATING AREA 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10ms TC = 25°C Single Pulse DC
POWER DISSIPATION PD (W)
80
DRAIN CURRENT ID (A)
tw=10µs 100µs 1ms
60
40
20
0
0
50
100
150
200
101 7 5
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 90W 6V
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= TC = 25°C 90W Pulse Test
20
10
DRAIN CURRENT ID (A)
16 7V 12 6V 8
DRAIN CURRENT ID (A)
8
6
5.5V
4 5V 2 TC = 25°C Pulse Test
4
5V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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