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Details, datasheet, quote on part number:FS25SM-10A
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Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS25SM-10A
HIGH-SPEED SWITCHING USE
FS25SM-10A
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5 1.5
5.0
f 3.2
2
2
4
20.0
1.0
5.45
5.45
19.5MIN.
4.4
0.6
2.8
4
G 10V DRIVE G VDSS ........ 500V G rDS (ON) (MAX) ..... 0.20 G ID ........ 25A
GATE DRAIN SOURCE DRAIN
TO-3P
APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings 500 ±30 25 75 25 200 55 ~ +150 55 ~ +150 4.8
Unit V V A A A W °C °C g Sep. 2001
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 200µH Maximum power dissipation Channel temperature Storage temperature Weight Typical value
MITSUBISHI Nch POWER MOSFET
FS25SM-10A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs C iss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 ± 30 -- -- 2.5 -- -- 15.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.15 1.80 25.0 4600 460 100 60 100 630 140 1.5 -- Max. -- -- ± 10 1 3.5 0.20 2.40 -- -- -- -- -- -- -- -- 2.0 0.625
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tur n-on delay time Rise time Tur n-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 12A, VGS = 10V, RGEN = RGS = 50
IS = 12A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250 MAXIMUM SAFE OPERATING AREA
7 5 3 2
POWER DISSIPATION PD (W)
200
DRAIN CURRENT ID (A)
102
7 5 3 2
tw = 10µs 100µs 1ms TC = 25°C Single Pulse
10 ms
150
101
100
7 5 3 2
50
100
7 5 3 2
DC
0
0
50
100
150
200
23
5 7 101
23
5 7 102
23
57
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
PD = 200W VGS = 20V,10V,6V
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V,10V,8V,5V
DRAIN CURRENT ID (A)
40
TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
16
30
5V
12
TC = 25°C Pulse Test
20
8
10
4
4V
0
0
4
8
12
16
20
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001
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