|
Details, datasheet, quote on part number:FS2KM-12A
| |
Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
FS2KFS2KM-A A M-12 12
HIG PEED SWITCHING USE HIGH-SH-SPEED SWITCHING USE
FS2KM-12A
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
2.6 ± 0.2
G 10V DRIVE G VDSS ....... 600V G rDS (ON) (MAX) ....... 6.4 G ID .......... 2A
GATE DRAIN SOURCE
TO-220FN
APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200µH VGS = 0V VDS = 0V Conditions Ratings 600 ± 30 2 6 2 25 55 ~ +150 55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g
4.5 ± 0.2
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS2KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS I GSS I DSS VGS (th) rDS (ON) VDS (ON) y fs C iss C oss C rss t d (on) tr t d (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ± 30 -- -- 2.5 -- -- 1.2 -- -- -- -- -- -- -- -- -- Ty p. -- -- -- -- 3.0 5.0 5.0 2.0 280 30 7 10 10 45 25 1.5 -- Max. -- -- ± 10 1 3.5 6.4 6.4 -- -- -- -- -- -- -- -- 2.0 5.00
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tur n-on delay time Rise time Tur n-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40 MAXIMUM SAFE OPERATING AREA
7 5 3 2
POWER DISSIPATION PD (W)
32
DRAIN CURRENT ID (A)
tw = 10µs 100µs 1ms
10 ms
1 00
7 5 3 2 7 5 3 2
24
101
TC = 25°C Single Pulse
16
DC
8
102
7 5 3 2
0
0
50
100
150
200
23
5 7 1 01
23
5 7 1 02
23
57
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 5
TC = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 2.0
VGS = 20V,10V,6V,5V
DRAIN CURRENT ID (A)
4
VGS = 20V,10V,6V
DRAIN CURRENT ID (A)
1.6
3
5V
1.2
PD = 25W
2
PD = 25W
0.8
TC = 25°C Pulse Test
1
4V
0.4
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001
|
|
