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Details, datasheet, quote on part number:FS50UM-3
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| Part: | FS50UM-3 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => for General Switching |
| Description: | |
| Company: | Renesas |
| Datasheet: | Download FS50UM-3 datasheet File size : 80 kB |
| Request For quote: | Find where to buy FS50UM-3
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Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS50UM-3
HIGH-SPEED SWITCHING USE
FS50UM-3
OUTLINE DRAWING
10.5MAX. r
Dimensions in mm
4.5 1.3
3.2
16
12.5MIN.
3.8MAX.
1.0
7.0
f 3.6
0.8
D
0.5 2.6
2.54
2.54
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
¡10V DRIVE ¡VDSS ........ 150V ¡rDS (ON) (MAX) ..... 31m ¡ID ........ 50A ¡Integrated Fast Recovery Diode (TYP.) .. 130ns
q
TO-220
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 50 200 50 50 200 125 55 ~ +150 55 ~ +150 2.0
4.5MAX.
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS50UM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 24 0.600 55 6540 860 360 95 155 380 180 1.0 -- 130 Max. -- ±0.1 0.1 4.0 31 0.775 -- -- -- -- -- -- -- -- 1.5 1.0 --
Unit V µA mA V m V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 3 2
POWER DISSIPATION PD (W)
160
DRAIN CURRENT ID (A)
120
102 7 5 3 2 101 7 5 3 2
tw = 10ms
100ms 1ms 10ms
80
40
100
0
0
50
100
150
200
DC 7 TC = 25°C 5 Single Pulse 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 20V 10V 8V 7V 6V
DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 20V 10V 7V 6V TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
80
TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
40
5V
60
30
40
5V PD = 125W
20
20
10
4V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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