Details, datasheet, quote on part number: FX30KMJ-2
PartFX30KMJ-2
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => for General Switching
Titlefor General Switching
Description
CompanyRenesas
DatasheetDownload FX30KMJ-2 datasheet
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Features, Applications

Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.

The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.

Renesas Technology Corp. Customer Support Dept. April 1, 2003

4V DRIVE VDSS............................................................. 100V rDS (ON) (MAX).............................................. 0.143 ID.................................................................... 30A Integrated Fast Recovery Diode (TYP.).........100ns Viso................................................................................ 2000V

APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V

Drain current (Pulsed) Avalanche drain current (Pulsed) = 30H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight

Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA



 

Some Part number from the same manufacture Renesas
FX30KMJ-3
FX30SMJ-3
FX3ASJ-3
FX50KMJ-03
FX50KMJ-06
FX50KMJ-2
FX50SMJ-03
FX50SMJ-06
FX50SMJ-2
FX6ASJ-06
FX6ASJ-2
FX6ASJ-3
FX6KMJ-06
FX6KMJ-2
FX6KMJ-3
FX70KMJ-03
FX70SMJ-03
FY10AAJ-03F
FY12AAJ-03F
FY14AAJ-03F
FY3ACJ-03F

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