Details, datasheet, quote on part number: FX30KMJ-2
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => for General Switching
Titlefor General Switching
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Features, Applications

Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.

The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.

Renesas Technology Corp. Customer Support Dept. April 1, 2003

4V DRIVE VDSS............................................................. 100V rDS (ON) (MAX).............................................. 0.143 ID.................................................................... 30A Integrated Fast Recovery Diode (TYP.).........100ns Viso................................................................................ 2000V

APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V

Drain current (Pulsed) Avalanche drain current (Pulsed) = 30H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight

Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time



Some Part number from the same manufacture Renesas

M38513M8-SP : Single-chip 8-bit CMOS Microcomputer

M38587GB-XXXFP : Single-chip 8-bit CMOS Microcomputer

M38047F0FP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series

M38061MD-XXXFS : Single-chip 8-bit CMOS Microcomputer

M38823GD-XXXHP : Single-chip 8-bit CMOS Microcomputer

M16C/65 : Renesas MCU M16C Family / M16c/60

PCA7414 : Adapter Programmers, Development System; PROGRAMMING ADAPTER 740 SERIES Specifications: For Use With/Related Products: 740 Family MCUs ; Module/Board Type: Programming Adapter ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant

UPA804T-T1FB : 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR Specifications: Polarity: NPN ; Package Type: MINIMOLD PACKAGE-6 ; Number of units in IC: 2 ; Operating Frequency: 5000 MHz

UPD780131GC-XXX-8BS-A : 8-BIT, MROM, 10 MHz, MICROCONTROLLER, PDSO30 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 10 MHz ; ROM Type: MROM ; Supply Voltage: 4 to 5.5 volts ; I/O Ports: 22 ; Package Type: SSOP, Other, 0.300 INCH, PLASTIC, SSOP-30 ; Operating Range: Industrial ; Pin Count: 30 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Features: PWM

Same catergory

1N5343B : Pot (W) = 5 ;; VZ(V) = 7V5 200. Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350C. 3. Max. soldering time, 3.5 sec. 4. Do not bend lead at a point closer than 3 mm. to the body. Glass passivated junction The plastic material carries U/L recognition 94 V-0 Terminals: Axial Leads Polarity: Color band denotes cathode Ptot P ZSM Power.

2SK1821-01M : N-channel MOS-FET. High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS 30V Guarantee Avalanche Proof Switching Regulators UPS DC-DC converters General Purpose Power Amplifier - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse.

5EQ100 : 5 to 100 Amp. Schottky Rectifier 8 Amp. Major Ratings and Characteristics IF(AV) VRRM IFSM = 8.3ms half-sine =125C 5EQ100 Units C / The 5EQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated LCC-18 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest.

ASI10732 : NPN Silicon RF Power Transistor.

BAV74LT1 : Common Cathode Minibloc , Package: SOT-23 (TO-236), Pins=3. Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 200 500 Unit Vdc mAdc Characteristic Total Device Dissipation = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature.

BC338-25 : Transistor Silicon Plastic NPN. COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO 1.5 12 TJ, Tstg 25 30 Unit Vdc mAdc mW mW/C W mW/C C 3 EMITTER Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation = 25C Derate above 25C Total Device Dissipation = 25C Derate above 25C Operating and Storage Junction Temperature.

HC230-0907 : PMT Modules. Complete evaluation kit designed for Hamamatsu Image Sensors (CCD, InGaAs and NMOS) Newly Updated software drivers and power supply! LabVIEW drivers Wavelength calibration Automated measurement functions UV NIR spectral coverage Cooled camera head APPLICATION UV imaging ICP A/D Card DWDM Channel monitor NIR spectrometer Scientific measuring instrument.

IRF5Y540CM : 100V Single N-channel Hi-rel MOSFET in a TO-257AA Package. Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient.

M54587FP : Package = 20 Pin Sop ;; Unit = 8 ;; Input_fct Voltage = L ;; Output Current = Sink ;; Io Max (mA) = 500 ;; Vo Max (V) = 50.

SPD08N05L : Sipmos(r) Power Transistor: 55v, 8.4a. Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Avalanche rated Logic Level dv/dt rated 175C operating temperature MaximumRatings = 25 C, unless otherwise specified Symbol Parameter Continuous drain current Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s Thermal Characteristics Parameter.

03028-BR181AKZP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00018 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.80E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

BFT29XG4 : 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA. s: Polarity: NPN ; Package Type: HERMETIC SEALED, METAL, TO-18, 3 PIN.

RGLD3Y101G : RESISTOR, NETWORK, FILM, ISOLATED, THROUGH HOLE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, SIP ; Tolerance: 2 +/- % ; Temperature Coefficient: 200 ±ppm/°C ; Power Rating: 0.1250 watts (1.68E-4 HP) ; Operating DC Voltage: 100 volts ; Number.

SA4-100K : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 10 microH ; Rated DC Current: 335 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

501H03 : CAPACITOR, CERAMIC, 500 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -55 to 125 C (-67 to 257 F).

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