Details, datasheet, quote on part number: FX3ASJ-3
PartFX3ASJ-3
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => for General Switching
Titlefor General Switching
Description
CompanyRenesas
DatasheetDownload FX3ASJ-3 datasheet
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Features, Applications

Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.

The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.

Renesas Technology Corp. Customer Support Dept. April 1, 2003

4V DRIVE VDSS............................................................. 150V rDS (ON) (MAX).................................................. 1.2 ID...................................................................... 3A Integrated Fast Recovery Diode (TYP.)...........80ns

APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.

Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) = 100H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value

Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA



 

Some Part number from the same manufacture Renesas
FX50KMJ-03
FX50KMJ-06
FX50KMJ-2
FX50SMJ-03
FX50SMJ-06
FX50SMJ-2
FX6ASJ-06
FX6ASJ-2
FX6ASJ-3
FX6KMJ-06
FX6KMJ-2
FX6KMJ-3
FX70KMJ-03
FX70SMJ-03
FY10AAJ-03F
FY12AAJ-03F
FY14AAJ-03F
FY3ACJ-03F
FY4ADJ-03A
FY4AEJ-03
FY5ACJ-03F

2SC4963 : Silicon NPN Triple Diffused

HD74HC1G08 :

M38030F8L-XXXHP : Single-chip 8-bit CMOS Microcomputer

M38K27M4L-XXXHP : Renesas 8-bit Single-chip Microcomputer 740 Family / 38000 Series

M38B54E9XXXFP : Single-chip 8-bit CMOS Microcomputer

R1Q3A7218ABG60RS0 : 36-mbit Qdrii SRAM 2-word Burst

M38020M2-192SP : 8-bit Single-chip Microcomputer 740 Family / 38000 Series

M38504ED-XXXFP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series

M38K02FB : Renesas 8-bit Single-chip Microcomputer 740 Family / 38000 Series

M30879FLBGP : Renesas MCU

R1Q5A3618ABG50RS0 : 36-mbit Qdrii SRAM 2-word Burst

M38507M1A-XXXFP : 8-bit CISC Single-chip Microcomputer 740 Family / 38000 Series

Same catergory

2SK2393 : Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

BC327 : ic (mA) = 800 ;; VCBO(V) = 50 ;; VCEO(V) = 45.

BUZ103SL-4 : Sipmos Power Transistor. Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt rated Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.8 Unit A Gate source voltage Power dissipation ,one channel active Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Characteristics Parameter Symbol min. Thermal.

EA30QS03L : Device = SBD ;; Ripetitive Peak Reverse Voltage(V) = 30 ;; Average Rectified Current(A) = 3 ;; Condition(cace or Ambient Temperature) = Tc=126 ;; Surge Forward Current(A) = 45 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 0.45 ;; Peak Forward Current(A) = 3 ;; Peak Reverse.

FE3AthruFE3D : . High temperature metallurgically bonded construction Cavity-free glass passivated junction Superfast recovery time for high efficiency Low forward voltage, high current capability Capable of meeting environmental standards of MIL-S-19500 Hermetically sealed package Low leakage current High surge current capability High temperature soldering guaranteed:.

FY5ACJ-03A : Type = Trench Gate Dual ;; Voltage = 30V ;; Rdson = 55 ;; Package = Obsolete ;; Drive Voltage = 4.

KTB2955 : = General Purpose Transistor ;; Package = TO-220AB.

SD101AW : Schottky Diode. For general purpose applications The SD101 series is a Metal-on-silicon Schottky barrier device which is protected a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available.

TISP7380F3 : Triple Bidirectional Thyristor Overvoltage Protectors.

03028BX153ZJZC : CAPACITOR, CERAMIC, MULTILAYER, 25 V, BX, 0.015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0150 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.

0508CG241J500SB : CAP,CERAMIC,240PF,50VDC,5% -TOL,5% +TOL,NP0 TC CODE,-30,30PPM TC,0508 CASE. s: Dielectric: Ceramic Composition.

EEEHB0G151P : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 4 V, 150 uF, SURFACE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 150 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 4 volts ; Leakage Current: 6 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -40 to 105 C (-40 to 221 F).

F35W60C3 : 35 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.1000 ohms ; Package Type: TO-3, MTO-3P, 3 PIN ; Number of units in IC: 1.

FP1/2 : RESISTOR, METAL FILM, 0.5 W, 1; 2; 5; 10 %, 150 ppm, 10 ohm - 1000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 350 volts ; Operating Temperature: 70 to 150 C (158 to 302 F).

ICVL0518V500PB : RESISTOR, VOLTAGE DEPENDENT, 18 V, 0.02 J, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD) ; Operating DC Voltage: 18 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.

M-U00037-02 : 1 ELEMENT, 0.0015 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: None ; Application: General Purpose, RF Choke ; Inductance Range: 0.0015 microH.

PT-35E12-L3 : POWER TRANSFORMER, 2 VA. s: Category: Power ; Other Transformer Types / Applications: STANDARD ; Mounting: Chip Transformer ; Power Rating (VA): 2 VA.

SF3L20U-4000 : 3 A, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, SUPER FAST RECOVERY ; IF: 3000 mA ; trr: 0.0350 ns.

SMF239KJT : RESISTOR, METAL FILM, 2 W, 5 %, 100 ppm, 39000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 39000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 2 watts (0.0027.

8P4J-Z-E1-AZ : SILICON CONTROLLED RECTIFIER,400V V(DRM),8A I(T),TO-252. s: Thyristor Type: SCR ; Standards and Certifications: RoHS.

 
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