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Details, datasheet, quote on part number:FX70SMJ-03
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Datasheet text preview:
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
P
ion. hange. icat ecif ect to c l sp j fina re sub a not ts a is is ric limi t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
FX70SMJ-03
OUTLINE DRAWING
15.9 max
Dimensions in mm
4.5 1.5
4
2
2
4
20.0
3.2
5.0
19.5 min
4.4
G
0.6 2.8
1.0
1 2 3
5.45
5.45
4
3
· 4V DRIVE · VDSS ...... 30V · rDS (ON) (MAX) ............ 12.3m · ID ........... 70A · Integrated Fast Recovery Diode (TYP.) .. 70ns
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
1
1 2 3 4 24
GATE DRAIN SOURCE DRAIN
TO-3P
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V
Conditions
Ratings 30 ±20 70 280 70 70 280 150 55 ~ +150 55 ~ +150
Unit V V A A A A A W °C °C g Jan.1999
Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value
4.8
P
ion. hange. icat ecif ect to c l sp j fina re sub a not ts a is is ric limi t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 26A, VGS = 4V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.8 10.0 19 0.35 55.8 11140 2300 1000 85 228 751 360 1.0 -- 70 Max. -- ±0.1 0.1 2.3 12.3 25 0.43 -- -- -- -- -- -- -- -- 1.5 0.83 --
Unit V µA mA V m m V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 35A, VGS = 10V, RGEN = RGS = 50
IS = 35A, VGS = 0V Channel to case IS = 35A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
3 2
200
102
7 5 3 2
tw = 100µs
1ms 10ms TC = 25°C Single Pulse DC
150
101
7 5 3 2
100
50
100 0 0 50 100 150 200
7 5 2 3 5 7100 2 3 5 7101 2 3 5 7102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 8V 6V
OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 10V 8V 4V 6V 5V
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
PD = 150W 5V
40
60
30
40
Tc = 25°C Pulse Test
4V
20
3V
20
10
Tc = 25°C Pulse Test
3V
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999
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