|Category||Memory => Flash => AND Flash => Memory|
|Datasheet||Download HN29V25611AT-50 datasheet
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.comRenesas Technology Corp. Customer Support Dept. April 1, 2003
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small + 64) bytes. Initial available sectors of HN29V25611A are more than (98% of all sector address) and less than 16,384 sectors.Features
On-board single power supply (VCC): VCC 3.6 V Organization AND Flash Memory: + 64) bytes × (More than 16,057 sectors) Data register: + 64) bytes Multi-level memory cell 2 bit/per memory cell Automatic programming Sector program time: 1.0 ms (typ) System bus free Address, data latch function Internal automatic program verify function Status data polling function Automatic erase Single sector erase time: 1.0 ms (typ) System bus free Internal automatic erase verify function Status data polling function
|Some Part number from the same manufacture Renesas|
|HN29V51211T-50 512M And Type Flash Memory More Than 32,113-sector (542,581,248-bit)|
|HN29W12811T-60 128M And Type Flash Memory More Than 8,029-sector (135,657,984-bit)|
|HN29W12814ASeries 128m And Type Flash Memory|
|HN29W25611Series 256m And Type Flash Memory|
|HN29W25611T-50 256M And Type Flash Memory More Than 16,057-sector (271,299,072-bit)|
|HN29W256AH03TE-1 Controller For And Flash Memory|
|HN29W6411ASeries 64m And Type Flash Memory|
|HN29W6484DH08TE-1 Controller For And Flash Memory|
|HN58C1001FP-15 1M EePROM (128-kword X 8) Ready/busy And Res Function|
|HN58C1001Series 131072-word 4 8-bit Electrically Erasable And Programmable CMOS ROM|
|HN58C1001T-15 1M EePROM (128-kword X 8) Ready/busy And Res Function|
|HN58C256AISeries 32768-word 4 8-bit Electrically Erasable And Programmable CMOS ROM|
|HN58C256ASeries 256k EePROM (32-kword 4 8-bit) Ready/busy And Res Function (hn58c257a)|
|HN58C257ASeries 256k EePROM (32-kword 4 8-bit) Ready/busy And Res Function (hn58c257a)|
2SK2932 : Power Switching MOSFET
M38K26MELHP : Renesas 8-bit Single-chip Microcomputer 740 Family / 38000 Series
M38D28G2XXXHP : Single-chip 8-bit CMOS Microcomputer
HD6437145FW50 : RISC MICROCONTROLLER Specifications: Life Cycle Stage: ACTIVE
HZ6C2LTAX : 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Specifications: Diode Type: VOLTAGE REGULATOR DIODE
M30260F6TGP-U3 : 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP48 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 20 MHz ; ROM Type: Flash ; Supply Voltage: 3 to 5.5 volts ; I/O Ports: 39 ; Package Type: LFQP, Other, 7 X 7 MM, 0.50 MM PITCH, PLASTIC, LQFP-48 ; Pin Count: 48 ; Operating Temperature: -20 to 85 C (-4 to 185 F) ; Features: DMA, PWM
UPD120N15TA-E1-A : 1.5 V FIXED POSITIVE LDO REGULATOR, 0.9 V DROPOUT, PSSO3 Specifications: Regulator Type: Low Dropout ; Output Polarity: Positive ; Output Voltage Type: Fixed ; Package Type: Other, LEAD FREE, SC-62, 3 PIN ; Life Cycle Stage: ACTIVE ; Output Voltage: 1.46 to 1.54 volts ; VIN: 3 to 5.5 volts ; Dropout Voltage: 0.9000 volts
UPD44324184F5-E50Y-EQ2-A : 2M X 18 ZBT SRAM, 6.5 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 37749 kbits ; Number of Words: 2000 k ; Bits per Word: 18 bits ; Package Type: 15 X 17 MM, PLASTIC, FBGA-165 ; Pins: 165 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 6.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)
UPD78F0136HGB(A)-8EU-A : 8-BIT, FLASH, 8.38 MHz, MICROCONTROLLER, PQFP64 Specifications: Data Bus: 8 Bit ; Life Cycle Stage: ACTIVE ; Clock Speed: 8.38 MHz ; ROM Type: Flash ; Supply Voltage: 4 to 5.5 volts ; I/O Ports: 51 ; Package Type: LFQP, Other, 10 X 10 MM, PLASTIC, LQFP-64 ; Operating Range: Industrial ; Pin Count: 64 ; Operating Temperature: -40 to 85 C (-40 to 1
AAM29LV160BB120EC : 16 Megabit ( 2 M X 8-bit/1 M X 16-bit ) CMOS 3.0 Volt-only Boot Sector Flash Memory.
CAT24C21 : Dual Mode EePROM For Vesa Plug & Play, 1K (128x8)-bit. x 8) -Bit Dual Mode Serial EEPROM for VESATM "Plug-and-Play" s 400 kHz I2C bus compatible* s DDC1TM/DDC2TM interface compliant for s 16-byte page write buffer s Self-timed write cycle with auto-clear s 1,000,000 program/erase cycles s 100 year data retention s 8-pin DIP, SOIC, TSSOP or MSOP packages s Industrial and extended temperature ranges to 5.5 volt.
EM639165TS : Memory, DRAM, Sdram. Single ± 0.3V power supply Fast clock rate PC133: 133 MHz PC100: 100 MHz (CL2) Fully synchronous operation referenced to clock rising edge 4-bank operation controlled BA0, BA1 (Bank Address) Programmable Mode registers - /CAS Latency: 3 - Burst Length: or full page - Burst Type: interleaved or linear burst Byte Control DQML and DQMU Random column.
GR3281 : SRAM. The a 32768 word by 8 bits x 8) non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The pin-out of the GR3281 conforms to the JEDEC standards and is fully compatible with normal static RAM.The power down circuit is fully automatic and is referenced at 4.5 volts. At this point.
HYM324000GD-50 : FPM. 4M X 32bit DRAM Module Small Outline Memory Module. × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 0194 034 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single 0.3 V) supply Low power dissipation.
K4S643234E-SE/N : Mobile SDRAM. = K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ;; Organization = 2Mx32 ;; Vdd/Vddq(V) = 2.5 ;; Temperature = e ;; Current(Icc1/Icc6) = 55mA/350uA ;; Speed = 70,80,10 ;; Mobile Function = no ;; Package = 90FBGA ;; Production Status = Eol ;; Comments = -.
M15411EJ4V0DS00 : Flash Memory + Mobile Specified RAM. MCP (MULTI-CHIP PACKAGE) FLASH MEMORY AND MOBILE SPECIFIED RAM 32M-BIT FLASH MEMORY AND 16M-BIT CMOS MOBILE SPECIFIED RAM The is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 16,777,216 bits (1,048,576 words by 16 bits) Mobile specified RAM.
M36W432B : Multiple Memory Products. 32 Mbit (2MB X16, Boot BLOCK) Flash Memory And 4 Mbit (256K X16) SRAM, Multiple Memory Product.
M68AR024DZB : 16 Mbit 1m X16 1.8v Asynchronous SRAM. I/O SUPPLY VOLTAGE: 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V LOW STANDBY CURRENT TRI-STATE COMMON I/O SINGLE BYTE READ/WRITE AUTOMATIC POWER DOWN This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. TABLE.
MT55L512L18P-1 : 8mb ZBT SRAM. High frequency and 100 percent bus utilization Fast cycle times: 6ns, 7.5ns and 10ns Single +3.3V ±5% power supply (VDD) Separate or +2.5V isolated output buffer supply (VDDQ) Advanced control logic for minimum control signal interface Individual BYTE WRITE controls may be tied LOW Single R/W# (read/write) control pin CKE# pin to enable clock and suspend.
PDM41532 : 64kx16 CMOS Static RAM. The is a high-performance CMOS static RAM organized x 16 bits. The PDM41532 low power dissipation using chip enable (CE) and has an output enable input (OE) for fast memory access. Byte access is supported by upper and lower byte controls. The PDM41532 operates from a single 5.0V power supply and all inputs and outputs are fully TTLcompatible. The PDM41532.
VDABC1608 : VDABC1608, 128, 16MX64, 4B/LVTTL, 4K/64ms, 168, (8MX16)*8.
W981616AH : 512k X 2 Banks X 16 Bit Sdram.
LE28FV4001CTS-20 : 512K X 8 FLASH 3.3V PROM, 200 ns, PDSO32. s: Memory Category: Flash, PROM ; Density: 4194 kbits ; Number of Words: 512 k ; Bits per Word: 8 bits ; Package Type: TSOP, 8 X 14 MM, PLASTIC, TSOP-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 200 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).
70V639S10BC8 : 128K X 18 DUAL-PORT SRAM, 10 ns, PBGA256. s: Memory Category: SRAM Chip ; Density: 2359 kbits ; Number of Words: 128 k ; Bits per Word: 18 bits ; Package Type: BGA, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 ; Pins: 256 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).