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Details, datasheet, quote on part number:HTT1132E
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Datasheet text preview:
HTT1132E
Silicon NPN Epitaxial Twin Transistor
REJ03G0008-0100Z Rev.1.00 Apr.14.2003
Features
· Include 2 transistors in a small size SMD package: EMFPAK6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor 2SC5872 Q2: Equivalent OSC transistor 2SC5849
Outline
EMFPAK-6 Pin Arrangement
6
5
4
B1 6 Q1
E2 5 Q2
B2 4
1
2
3 1 2 3
C1
E1
C2
1. Collector Q1 2. Emitter Q1 3. Collector Q2
4. Base Q2 5. Emitter Q2 6. Base Q1
Note:
Mark is "B".
Rev.1.00, Apr.14.2003, page 1 of 21
HTT1132E
Absolute Maximum Ratings
(Ta = 25 °C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Q1 16 6 0.8 50 Total 200* 150 55 to +150 Q2 15 6 1.5 80 Total 200* 150 55 to +150 Unit V V V mA mW °C °C
*Value on PCB. (FR4 (13 x 13 x 0.635 mm)).
Collector Power Dissipation Curve
Pc* (mW)
250
*Value on PCB.
200
(FR4 (13 x13 x 0.635 mm)) 2 devices total
Collector Power Dissipation
150
100
50
0
50
100
150 Ta (°C)
200
Ambient temperature
Rev.1.00, Apr.14.2003, page 2 of 21
HTT1132E
Q1 Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO ICBO ICEO IEBO hFE Min 16 90 8 13 Typ 120 0.25 0.38 10 12 16 1.0 Max 0.1 0.1 0.1 140 0.35 1.6 Unit V µA µA µA pF pF GHz GHz dB dB Test Condition IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 6V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCB = 1 V, f = 1 MHz VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 3V, IC = 15mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50
Reverse transfer capacitance Cre Collector output capacitance Gain bandwidth product Gain bandwidth product Forward transfer coefficient Noise figure Cob fT fT |S21|2 NF
Q2 Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO ICBO ICEO IEBO hFE Min 15 90 2 7 Typ 120 0.50 0.68 4 11 11 1.7 1.1 Max 0.1 0.1 0.1 140 0.65 2.3 Unit V µA µA µA pF pF GHz GHz dB dB dB Test Condition IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 6V, RBE = infinite VEB = 1.5V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCB = 1 V, f = 1 MHz VCE = 1 V, IC = 5 mA, f = 1 GHz VCE =3V, IC = 50mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz S = L = 50 VCE = 1 V, IC = 5 mA, f = 900 MHz
Reverse transfer capacitance Cre Collector output capacitance Gain bandwidth product Gain bandwidth product Forward transfer coefficient Noise figure Noise figure Cob fT fT |S21|2 NF NF
Rev.1.00, Apr.14.2003, page 3 of 21
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