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Details, datasheet, quote on part number:HVD191
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Datasheet text preview:
HVD191
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
REJ03G0015-0100Z Rev.1.00 Apr.28.2003
Features
· Low capacitance. (C 0.37 pF) · Low forward resistance. (rf 2.5 ) · Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD191 Laser Mark H2 Package Code SFP
Pin Arrangement
Cathode mark Mark 1
H2
2 1. Cathode 2. Anode
Rev.1.00, Apr.28.2003, page 1 of 5
HVD191
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 150 125 -55 to +125 Unit V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance Symbol VF IR C rf Min Typ Max 1.0 0.1 0.37 2.5 Unit V µA pF Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz
Notes: 1. Please do not use the soldering iron due to avoid high stress to the SFP package. 2. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
Rev.1.00, Apr.28.2003, page 2 of 5
HVD191
Main Characteristic
102 107 108 10
Forward current IF (A)
4
106
Reverse current IR (A)
109 1010 1011 1012 1013
108
1010
1012
0
0.2
0.4
0.6
0.8
1.0
1014
0
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 10 f = 1MHz
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 103 f = 100MHz
1.0
Forward resistance rf ()
102
Capacitance C (pF)
101
0.1
100
0.01 0.1
1.0
10
100
101 4 10
103
102
101
Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage
Forward current IF (A) Fig.4 Forward resistance vs. Forward current
Rev.1.00, Apr.28.2003, page 3 of 5
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