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Part: HZU22L3

Category:
 Discrete
   -> Diodes & Rectifiers
             -> Diodes for Constant Voltage

Description:

Company: Renesas

Datasheet: Download HZU22L3 datasheet     File size : 2898 kB

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Datasheet text preview:
HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0100Z Rev.1.00 Jun.05.2003
Features
· Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage and low zener impedance. · Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. · Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU-L Series Mark Type No. Package Code URP
Pin Arrangement
Cathode mark Mark 1
61
2 1. Cathode 2. Anode
Rev.1.00, Jun.05.2003, page 1 of 8
HZU-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 150 150 ­55 to +150 Unit mW °C °C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage VZ (V)* Grade HZU6L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZU7L A1 A2 A3 B1 B2 B3 C1 C2 C3 Min 5 .2 5.3 5.4 5.5 5.6 5.7 5.8 6 .0 6 .1 6 .3 6.4 6.6 6.7 6.9 7.0 7 .2 7 .3 7 .5
1
Reverse Current
Dynamic Resistance ESD-Capability Test Condition IZ (mA) 0.5 (V) * Min 200
2
Test Test Condition IR (µA) Condition rd () µ Max 5.5 5 .6 5 .7 5 .8 5 .9 6 .0 6 .1 6.3 6.4 6.6 6 .7 6 .9 7 .0 7 .2 7 .3 7.6 7.7 7.9 0 .5 1 3 .5 60 60 80 IZ (mA) 0 .5 Max 1 VR (V) 2 .0 Max 150
0.5
0.5
0.5
200
Notes: 1. Tested with DC. 2. C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse. Failure criterion ; According to IR spec.
Rev.1.00, Jun.05.2003, page 2 of 8
HZU-L Series
Zener Voltage VZ (V)* Type HZU9L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZU11L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZU12L A1 A2 A3 B1 B2 B3 C1 C2 C3 HZU15L 1 2 3 HZU16L 1 2 3 Min 7 .7 7.9 8.1 8.3 8.5 8.7 8 .9 9 .1 9 .3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 15.3 15.7 16.3
1
Reverse Current
Dynamic Resistance ESD-Capability Test Condition IZ (mA) 0.5 (V) * Min 200
2
Test Test Condition IR (µA) Condition rd () µ Max 8.1 8 .3 8 .5 8 .7 8 .9 9 .1 9.3 9.5 9.7 9 .9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 14.7 15.1 15.5 15.9 16.5 17.1 0.5 1 14.0 80 0.5 1 13.0 80 0 .5 1 10.5 80 0.5 1 8.0 80 IZ (mA) 0 .5 Max 1 VR (V) 6 .0 Max 60
0 .5
200
0 .5
200
0.5
200
0.5
200
Notes: 1. Tested with DC. 2. C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse. Failure criterion ; According to IR spec.
Rev.1.00, Jun.05.2003, page 3 of 8


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