Details, datasheet, quote on part number: 1N3209
CategorySemiconductors => Discrete Semiconductors => Rectifiers
TitleRectifiers 100V 15A Std. Recovery
CompanyGeneSiC Semiconductor
DatasheetDownload 1N3209 datasheet
Find where to buy
ManufacturerGeneSiC Semiconductor
RoHS Details
ProductStandard Recovery Rectifier
Reverse Voltage100 V
Forward Voltage Drop1.1 V
Forward Continuous Current15 A
Max Surge Current297 A
Reverse Current IR10 uA
Mounting StyleStud
Package / CaseDO-5
1N3209 photo


Features, Applications
High Surge Capability Types 600 V VRRM DO-5 Package

Parameter Repetitive p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg = 25 °C, 8.3 ms Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) to 175 Unit °C

Parameter Diode forward voltage Reverse current Symbol VF IR Conditions °C 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Unit A mA °C/W


Some Part number from the same manufacture GeneSiC Semiconductor
1N3210R Specifications: Manufacturer: GeneSiC Semiconductor ; RoHS:  Details ; Product: Standard Recovery Rectifier ; Reverse Voltage: 200 V ; Forward Voltage Drop: 1.1 V ; Forward Continuous Current: 15 A ; Max Surge
Same catergory

AH2984-PG-B : Motor / Motion / Ignition Controllers & Drivers OMNI-POLAR SWITCH HALL IC. s: Manufacturer: Diodes Inc. ; Product Category: Motor / Motion / Ignition Controllers & Drivers ; RoHS:  Details ; Product: Fan / Motor Controllers / Drivers ; Type: Two Phase Hall Effect Smart Fan Motor Controller ; Operating Supply Voltage: 2.5 V to 15 V ; Supply Current:.

AP1117YG-13 : Low Dropout (LDO) Regulators LINEAR REG FIXED-MODE. The Diodes Inc. AP1117 low dropout ( LDO ) positive adjustable or fixed-mode regulator with 1A output current capability provides well-regulated supply for low IC applications such as high-speed bus termination and low current 3.3V logic supply. The Diodes Inc. AP1117 LDO regulator is also well-suited.

KSP44BU : Transistors Bipolar (BJT) NPN Si Transistor Epitaxial. s: Manufacturer: Fairchild Semiconductor ; Product Category: Transistors Bipolar (BJT) ; RoHS:  Details ; Transistor Polarity: NPN ; Collector- Emitter Voltage VCEO Max: 400 V ; Emitter- Base Voltage VEBO: 6 V ; Maximum DC Collector Current: 0.3 A ; DC Collector/Base Gain hfe Min: 50 ; Configuration:.

SS8550CBU : Transistors Bipolar (BJT) TO92 PNP 2W BULK. s: Manufacturer: Fairchild Semiconductor ; Product Category: Transistors Bipolar (BJT) ; RoHS:  Details ; Transistor Polarity: PNP ; Collector- Emitter Voltage VCEO Max: 25 V ; Emitter- Base Voltage VEBO: - 6 V ; Maximum DC Collector Current: 1.5 A ; DC Collector/Base Gain hfe Min: 85 ; Configuration:.

MCF54454VR266 : Microprocessors (MPU) MCF5445X V4M CORE MMU. s: Manufacturer: Freescale Semiconductor ; Product Category: Microprocessors (MPU) ; RoHS:  Details ; Processor Series: MCF544x ; Core: ColdFire V4 ; Data Bus Width: 32 bit ; Development Tools By Supplier: M54455EVB ; Maximum Clock Frequency: 266 MHz ; Operating Supply Voltage: - 0.3 V to + 4 V ; Maximum.

24C00/P : EEPROM 16byte 128bit 5V. s: Manufacturer: Microchip ; Product Category: EEPROM ; RoHS:  Details ; Memory Size: 128 bit ; Organization: 16 x 8 ; Data Retention: 200 Years ; Maximum Clock Frequency: 400 KHz ; Maximum Operating Current: 5 mA ; Operating Supply Voltage: 4.5 V to 5.5 V ; Maximum Operating Temperature: + 125 C ; Mounting Style: Through.

BUK754R0-55B,127 : MOSFET HIGH PERF TRENCHMOS. s: Manufacturer: NXP ; Product Category: MOSFET ; RoHS:  Details ; Transistor Polarity: N-Channel ; Drain-Source Breakdown Voltage: 55 V ; Gate-Source Breakdown Voltage: +/- 20 V ; Continuous Drain Current: 193 A ; Resistance Drain-Source RDS (on): 0.004 Ohms ; Configuration: Single ; Maximum Operating Temperature: + 175 C ; Mounting.

MAX810SQ438T1G : Supervisory Circuits ANA 4.38V MC RESET. s: Manufacturer: ON Semiconductor ; Product Category: Supervisory Circuits ; RoHS:  Details ; Number of Voltages Monitored: 1 ; Monitored Voltage: 1.2 V to 4.9 V ; Undervoltage Threshold: 4.38 V ; Overvoltage Threshold: 4.45 V ; Output Type: Push-Pull ; Manual Reset: Not Resettable ; Watchdog: No Watchdog.

STH240N75F3-2 : MOSFET N-Ch 75V 2.6mOhm 180A STripFET III. These N-Channel STripFET& 8482; Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET& 8482; technology with a new gate structure. The resulting N-Channel STripFET& 8482; Power MOSFET exhibits the high current and low RDS(on) required.

AN26031A-PR : RF Amplifier LNA 2.5GHz 3V 18.5dB ALGA005-W-0609ANA. s: Manufacturer: Panasonic ; Type: Single Band Low Noise Amplifier ; Operating Frequency: 2.5 GHz ; P1dB: - 8.5 dBm ; Power Gain Typ: 18.5 dB ; Noise Figure: 0.8 dB ; Operating Supply Voltage: 2.7 V to 3.6 V ; Supply Current: 18 mA ; Maximum Operating Temperature: + 85 C ; Mounting Style: SMD/SMT.

PSMN075-100MSEX : MOSFET. s: Manufacturer: NXP ; Transistor Polarity: N-Channel ; Drain-Source Breakdown Voltage: 100 V ; Continuous Drain Current: 18 A ; Drain-Source On Resistance: 71 mOhms ; Configuration: Single ; Mounting Style: SMD/SMT ; Package / Case: LFPAK33 ; Packaging: Reel ; Fall Time: 6.2 ns ; Gate Charge Qg: 16.4 nC ; Power Dissipation: 65 W ; Rise Time:.

HMC751LC4 : RF Amplifier lo Noise amp SMT 17 - 27 GHz. Analog Devices/Hittite's HMC751LC4 SMT PHEMT Low Noise Amplifier is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless, Pb free, RoHS compliant SMT package. The HMC751LC4 provides 25dB of small signal gain, 2.2dB of noise figure and output IP3 of +25dBm. The P1dB output power.

SUA70090E-E3 : MOSFET 100V Vds 42.8A Id 0.0093Vgs Rds(On). Vishay Siliconix 40V / 100V TrenchFET® ThunderFET® Power MOSFETs offer industry-low ON-resistance and low total gate charge. For designers, the low ON-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Available packages include the TO-220, TO-252,.

SSM6K411TU(TE85L,F : MOSFET Small-signal MOSFET. Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs are ideal for small mobile devices. These include cell phones, notebook PCs, portable devices, and small signal switching. The SSM6K is very compact and thin, with a wide range of packages. Also, the devices feature low voltage drive with a VDSS range of 12V to 60V. Common.

0-C     D-L     M-R     S-Z