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Details, datasheet, quote on part number:HT93LC46
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Datasheet text preview:
HT93LC46
1K 3-Wire CMOS Serial EEPROM
Features
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Operating voltage VCC Read: 2.0V~5.5V Write: 2.4V~5.5V Low power consumption Operating: 5mA max. Standby: 10µA max. User selectable internal organization 1K(HT93LC46): 128×8 or 64×16 3-wire Serial Interface Write cycle time: 2ms max.
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Automatic erase-before-write operation Word/chip erase and write operation Write operation with built-in timer Software controlled write protection 10-year data retention after 100K rewrite cycles 106 rewrite cycles per word 8-pin DIP/SOP package Commercial temperature range (0°C to +70°C)
General Description
The HT93LC46 is a 1K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Its 1024 bits of memory are organized into 64 words of 16 bits each when the ORG pin is connected to VCC or organized into 128 words of 8 bits each when it is tied to VSS. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. By popular microcontroller, the versatile serial interface including chip select (CS), serial clock (SK), data input (DI) and data output (DO) can be easily controlled.
Block Diagram
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Pin Assignment
Pin Description
Pin Name
CS SK DI DO VSS ORG NC VCC
I/O
I I I O I I -- I Chip select input Serial clock input Serial data input Serial data output Negative power supply Internal Organization No connection Positive power supply
Description
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Absolute Maximum Ratings
Operation Temperature (Commercial) ...0°C to 70°C Applied VCC Voltage with Respect to VSS ........ 0.3V to 6.0V Applied Voltage on any Pin with Respect to VSS..... VSS0.3V to VCC+0.3V Supply READ Voltage....... 2V to 5.5V Note: These are stress ratings only. Stresses exceeding the range specified under "Absolute Maximum Ratings" may cause substantial damage to the device. Functional operation of this d evice at other conditions beyond those listed in the specification is not implied and p rolong ed exposure to extreme conditions may affect device reliability.
D.C. Characteristics
Symbol
V CC ICC1
Parameter
Operating Voltage Operating Current (TTL) Operating Current (CMOS) Standby Current (CMOS) Input Leakage Current Output Leakage Current Input Low Voltage
Test Conditions VCC
-- 5V 5V 2~5.5V 5V 5V 5V 5V 2~5.5V 5V 2~5.5V 5V
Conditions
Read Write DO unload, SK=1 MHz DO unload, SK=1MHz DO unload, SK=250kHz CS=SK=DI=0V VIN=VSS~VCC VOUT=VSS~VCC CS=0 V -- -- -- -- IOL=2.1mA IOH=400µA VIN=0V, f=250kHz VOUT=0V, f=250kHz
Min.
2.0 2.4 -- -- -- -- 0 0 0 0 2 0.9VCC -- -- 2.4 V C C 0 . 2 -- --
Typ.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Max.
5.5 5.5 5 5 5 10 1 1 0.8 0.1VCC V CC V CC 0.4 0.2 -- -- 5 5
Unit
V V mA mA mA
µA µA µA
ICC2
ISTB ILI ILO VIL VIH V OL VOH CIN COUT
V V V V V V V V pF pF
Input High Voltage
Output Low Voltage
2~5.5V IOL=10µA 5V 2~5.5V IOH=10µA -- --
Output High Voltage Input Capacitance Output Capacitance
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