Details, datasheet, quote on part number: HYM72V12C736BLS4-H
CategoryMemory => DRAM => SDR SDRAM => Modules => 1 GB => ->Registered DIMM
Title->Registered DIMM
CompanyHynix Semiconductor
DatasheetDownload HYM72V12C736BLS4-H datasheet


Features, Applications
with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B(L)S4 Series

The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in 8pin TSSOP package a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB. The HYM72V12C736B(L)S4 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 1Gbytes memory. The HYM72V12C736B(L)S4 Series are fully synchronous operation referenced to the positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. PC133MHz support FEATURES 168pin SDRAM Registered DIMM Serial Presence Detect with EEPROM 1.70" (43.18mm) Height PCB with double sided components Single 3.3±0.3V power supply 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface or 8 for Interleave Burst Data mask function by DQM Programmable CAS Latency 2, 3 Clocks SDRAM internal banks : four banks Module bank : two physical banks Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 2002 1

PIN ~ A12 /RAS, /CAS, / WE REGE ~ DQ63 VCC VSS SCL SDA ID1~3 NC PIN NAME Clock Inputs Clock Enable Chip Select SDRAM Bank Address Row Address Strobe, Column Address Strobe, Write Enable Register Enable Data Input/Output Mask Data Input/Output Power Supply (3.3V) Ground SPD Clock Input SPD Data Input/Output SPD Address Input Write Protect for SPD Identification Detect No Connection

DESCRIPTION The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CK, CKE and DQM Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity Row Address ~ RA12, Column Address CA9, CA11 Auto-precharge flag : A10 /RAS, /CAS and /WE define the operation Refer function truth table for details Register Enable pin which permits the DIMM to operateion in Buffered Mode when REGE input is Low, in Registered Mode when REGE input is High Controls output buffers in read mode and masks input data in write mode Multiplexed data input / output pin Power supply for internal circuits and input buffers Ground Serial Presence Detect Clock input Serial Presence Detect Data input/output Serial Presence Detect Address Input Write Protect for Serial Presence Detect on DIMM Commend Interval, Read Precharge Timing, Power Detect No connection


Related products with the same datasheet
Some Part number from the same manufacture Hynix Semiconductor
HYM72V12C736K4 128Mx72 Bits PC133 Sdram Registered Dimm With Pll, Based on 64Mx4 Sdram With Lvttl, 4 Banks & 8K Refresh
HYM72V12C756BLS4 128Mx72 Bits PC100 Sdram Registered Dimm With Pll, Based on 64Mx4 Sdram With Lvttl, 4 Banks & 8K Refresh
HYM72V12C756K4 128Mx72 Bits PC100 Sdram Registered Dimm With Pll, Based on 64Mx4 Sdram With Lvttl, 4 Banks & 8K Refresh
HYM72V16M636BLT6 16Mx64 Bits PC133 Sdram so Dimm Based on 16Mx16 Sdram With Lvttl, 4 Banks & 8K Refresh
HYM72V16M636HLT6 16Mx64 Bits PC133 Sdram so Dimm Based on 16Mx16 Sdram With Lvttl, 4 Banks & 8K Refresh
HYM72V16M636LT6 32Mx64bits PC133 Sdram Unbuffered Dimm Based on 32Mx8 Sdram With Lvttl, 4 Banks & 8K Refresh
HYM72V16M656BLT6 16Mx64 Bits PC100 Sdram so Dimm Based on 16Mx16 Sdram With Lvttl, 4 Banks & 8K Refresh

GM71VS17403CT/CLT-7 :

HY62KF08802B-SDI : Super Low Power Slow SRAM 1Mx8bit Full CMOS SRAM

HYM71V32C735AT4 : ->Registered DIMM 32Mx72 Bits PC133 Sdram Registered Dimm With Pll, Based on 32Mx4 Sdram With Lvttl, 4 Banks & 4K Refresh

HYMD232M646AL6_D : 256 MB

HYMD232M646CL6-J : 256 MB

HY29DL162TT-80I : 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/write Flash Memory

HY62KF08802B-SD : 1M x 8bit 2.7 ~ 3.6V Super low Power Fcmos Slow SRAM

HY29F040AC-15E : 512K x 8-bit CMOS 5.0 Volt-only, Sector Erase Flash Memory

Same catergory

HY57V651620B : 4 Banks X 1m X 16bit Synchronous DRAM. The Hynix a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized r o nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible.

HYMD232M646C6 : 256 MB. Hynix HYMD232M646C(L)6-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232M646C(L)6-J/M/K/H/L series consists of eight 16Mx16 DDR SDRAM in 400mil TSOP II packages a 200pin glass-epoxy substrate. Hynix HYMD232M646C(L)6-J/M/K/H/L.

K4H510638B : = K4H510638B Stacked 512Mb (x4) DDR Sdram ;; Organization = 128Mx4 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comments = Stacked.

KM68V257C : Fast SRAM. = KM68V257C 32K X 8 Bit High Speed CMOS Static RAM (3.3V Operating) ;; Organization = 32Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 15,17 ;; Operating Temperature = C ;; Operating Current(mA) = 90 ;; Standby Current(mA) = 0.1 ;; Package = 28SOJ,28TSOP1 ;; Production Status = Eol ;; Comments = -.

M29F016B55M1T : 16 Mbit 2mb X8, Uniform Block Single Supply Flash Memory. 16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME 8µs by Byte typical 32 UNIFORM 64 Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER ­ Embedded Byte Program algorithm ­ Embedded Multi-Block/Chip Erase algorithm ­ Status Register Polling and Toggle.

M58LR016C100ZC6T : 16 Mbit 1mb X16, Mux I/o, Dual Bank, Burst 1.8v Supply Flash Memory. 16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory SUPPLY VOLTAGE ­ VDD = VDDQ to 2.0V for Program, Erase and Read ­ VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ ­ Burst mode Read: 40MHz ­ Page mode Read (4 Words Page) ­ Random Access: 100ns PROGRAMMING TIME 10µs by Word typical ­ Two or four.

MX23L3212 : 32M, 4Mx8/2Mx16. Bit organization x 8 (byte mode) x 16 (word mode) Fast access time - Random access:70ns(max.) Current - Standby:5uA Supply voltage ~ 3.6V Package - 48 ball mini BGA x 7.0mm, ball pitch 0.8mm, ball size 0.4mm) Symbol D0~D14 D15/A-1 CE# OE# Byte# VCC VSS NC Pin Function Address Inputs Data Outputs D15 (Word Mode)/ LSB Address (Byte Mode) Chip Enable Input.

NL84620R : 256k Bit Synchronous Content Addressable Memory (synccam (r) -1r). The a 256K bit Synchronous Content Addressable Memory (SyncCAM®-1R). The device performs high-speed parallel search operations on memory tables while simultaneously capturing and manipulating data from a data stream. Its primary application as an address filter or an address translator for Fast Ethernet, Gigabit Ethernet, and ATM switches. The NL84620R.

NT256D72S89B0G-5T : 184 pin Unbuffered DIMM. 32M X72, SS, 2.6V, 32 X 8, (9), 1, PC3200-3-3-3,.

SMFV008 : Smart Media->8M Byte. = SMFV008 8M X 8 Bit Smartmedia Card ;; Organization = 8Mx8 ;; Operating Voltage(V) = 2.7~3.6 ;; Temperature = 0~55 ;; Speed(ns) = 50 ;; Package = 22PAD ;; Production Status = Eol ;; Comments = -.

WE32K32 : EEPROM MCP. Organization = 32Kx32 ;; Speed (ns) = 80-150 ;; Volt = 5 ;; Package = 68 CQFP ;; Temp = C,i,m,q ;;.

MT47H128M4JN-25:F : 128M X 4 DDR DRAM, 0.4 ns, PBGA60. s: Memory Category: DRAM Chip ; Density: 536871 kbits ; Number of Words: 128000 k ; Bits per Word: 4 bits ; Package Type: 8 X 10 MM, FBGA-60 ; Pins: 60 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 0.4000 ns ; Operating Temperature: 0 to 85 C (32 to 185 F).

PCD8572-I/J : 128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8. s: Density: 1 kbits ; Number of Words: 128 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 0 MHz ; Supply Voltage: 5V ; Package Type: 0.300 INCH, CERDIP-8 ; Pins: 8 ; Operating Range: Industrial ; Operating Temperature: -40 to 85 C (-40 to 185 F).

W26A041B70LI : 256K X 16 STANDARD SRAM, 70 ns, PBGA48. s: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: TFBGA-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 70 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

0-C     D-L     M-R     S-Z